2N7002PV,115
Trans MOSFET N-CH 60V 0.35A 6-Pin SOT-666 T/R
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.186 | $0.19 |
200 | $0.071 | $14.20 |
500 | $0.069 | $34.50 |
1000 | $0.068 | $68.00 |
Inventory:9,552
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Part Number : 2N7002PV,115
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Package/Case : SOT-666
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Brands : Nexperia
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Components Categories : FET, MOSFET Arrays
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Datesheet : 2N7002PV,115 DataSheet (PDF)
Overview of 2N7002PV,115
The 2N7002PV,115 stands out as a top-of-the-line solution for engineers and designers seeking a high-quality N-channel FET in an ultra small form factor. Its SOT666 package minimizes footprint while maximizing performance, making it a preferred choice for modern electronics. The incorporation of trench MOSFET technology sets this transistor apart by offering superior efficiency and reliability compared to traditional designs
Key Features
- Logic-level compatible
- Very fast switching
- Trench MOSFET technology
Application
- Relay driver
- High-speed line driver
- Low-side loadswitch
- Switching circuits
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | Nexperia | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | SOT-666-6 |
Transistor Polarity | N-Channel | Number of Channels | 2 Channel |
Vds - Drain-Source Breakdown Voltage | 60 V | Id - Continuous Drain Current | 350 mA |
Rds On - Drain-Source Resistance | 1.6 Ohms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 1.75 V | Qg - Gate Charge | 800 pC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 330 mW | Channel Mode | Enhancement |
Qualification | AEC-Q101 | Brand | Nexperia |
Product Type | MOSFET | Factory Pack Quantity | 4000 |
Subcategory | MOSFETs | Part # Aliases | 934064136115 |
Unit Weight | 0.000099 oz | Product Status | Not For New Designs |
Configuration | 2 N-Channel (Dual) | FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 60V | Current - Continuous Drain (Id) @ 25°C | 350mA |
Rds On (Max) @ Id, Vgs | 1.6Ohm @ 500mA, 10V | Vgs(th) (Max) @ Id | 2.4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 4.5V | Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 10V |
Power - Max | 330mW | Operating Temperature | 150°C (TJ) |
Grade | Automotive | Mounting Type | Surface Mount |
Supplier Device Package | SOT-666 | Base Product Number | 2N7002 |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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