• 2N7002K-T1-GE3 SOT-23-3
2N7002K-T1-GE3 SOT-23-3

2N7002K-T1-GE3

The 2N7002K-T1-GE3 is an N-channel MOSFET featuring ESD protection, able to handle currents of 0

Quantity Unit Price(USD) Ext. Price
10 $0.043 $0.43
100 $0.038 $3.80
300 $0.035 $10.50
3000 $0.025 $75.00
6000 $0.024 $144.00
9000 $0.023 $207.00

Inventory:7,503

*The price is for reference only.
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Overview of 2N7002K-T1-GE3

The 2N7002K-T1-GE3 is a N-channel MOSFET transistor designed for low-power, high-speed switching applications. It offers a compact and efficient solution for controlling electrical signals in electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the 2N7002K-T1-GE3 MOSFET for a visual representation.

Key Features

  • N-Channel MOSFET: The 2N7002K-T1-GE3 is an N-channel MOSFET transistor suitable for low-power switching applications.
  • High-Speed Switching: This MOSFET offers fast switching speeds, ideal for applications requiring rapid signal control.
  • Low Power Consumption: With its efficient design, the 2N7002K-T1-GE3 minimizes power consumption in electronic circuits.
  • Compact Package: Available in a small SOT-23 package for space-constrained applications.

Note: For detailed technical specifications, please refer to the 2N7002K-T1-GE3 datasheet.

Application

  • Switching Circuits: Ideal for use in electronic circuits that require efficient signal switching.
  • Power Management: Suitable for power management applications where low power consumption is essential.
  • Pulse Circuits: Used in pulse circuits for fast switching of signals.

Functionality

The 2N7002K-T1-GE3 N-channel MOSFET transistor enables precise control of electrical signals in various electronic applications, providing efficient and reliable switching capabilities.

Usage Guide

  • Gate Connection: Connect the control signal to the Gate pin for controlling the switching operation.
  • Drain Connection: Connect the load to the Drain pin for signal output.
  • Source Connection: Connect the common ground or source reference to the Source pin.

Frequently Asked Questions

Q: Is the 2N7002K-T1-GE3 suitable for high-frequency applications?
A: Yes, the 2N7002K-T1-GE3 is capable of operating at high frequencies, making it suitable for such applications.

Equivalent

For similar functionalities, consider these alternatives to the 2N7002K-T1-GE3:

  • BS170: A commonly used N-channel MOSFET with comparable specifications to the 2N7002K-T1-GE3.
  • IRLML2502: This MOSFET offers similar performance characteristics and is suitable for low-power applications.

2N7002K-T1-GE3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 300 mA Rds On - Drain-Source Resistance 2 Ohms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 400 pC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 350 mW
Channel Mode Enhancement Series 2N7002K
Brand Vishay Semiconductors Configuration Single
Forward Transconductance - Min 100 mS Height 1.45 mm
Length 2.9 mm Product Type MOSFET
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 35 ns
Typical Turn-On Delay Time 25 ns Width 1.6 mm
Part # Aliases 2N7002K-GE3 Unit Weight 0.000282 oz

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