2N5885
Trans GP BJT NPN 60V 25A 3-Pin(2+Tab) TO-3
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $194.234 | $194.23 |
200 | $77.502 | $15,500.40 |
500 | $74.911 | $37,455.50 |
1000 | $73.632 | $73,632.00 |
Inventory:5,653
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Part Number : 2N5885
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Package/Case : TO-204-2
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Brands : onsemi
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Components Categories : Bipolar Transistors - BJT
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Datesheet : 2N5885 DataSheet (PDF)
The 2N5885 is a silicon power transistor designed for high-voltage, high-speed power switching applications. It features a rugged design capable of handling high power dissipation, making it suitable for demanding environments. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Incorporate a circuit diagram that illustrates the connections and operation of the 2N5885 transistor for a visual representation. Note: For detailed technical specifications, please refer to the 2N5885 datasheet. Functionality The 2N5885 transistor is designed to switch high voltages and currents with high speed and efficiency. Its rugged construction and low saturation voltage make it an ideal choice for demanding power switching applications. Usage Guide Q: Can the 2N5885 be used in high-power applications? For similar functionalities, consider these alternatives to the 2N5885:Overview of 2N5885
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the 2N5885 is designed for high-power switching applications and can handle high power dissipation.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | onsemi | Product Category | Bipolar Transistors - BJT |
RoHS | N | Mounting Style | Through Hole |
Package / Case | TO-204-2 | Transistor Polarity | NPN |
Configuration | Single | Collector- Emitter Voltage VCEO Max | 60 V |
Collector- Base Voltage VCBO | 60 V | Emitter- Base Voltage VEBO | 5 V |
Collector-Emitter Saturation Voltage | 1 V | Maximum DC Collector Current | 25 A |
Pd - Power Dissipation | 200 W | Gain Bandwidth Product fT | 4 MHz |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 150 C |
Brand | onsemi | Continuous Collector Current | 25 A |
DC Collector/Base Gain hfe Min | 35 | Height | 8.51 mm |
Length | 39.37 mm | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 100 | Subcategory | Transistors |
Technology | Si | Width | 26.67 mm |
Unit Weight | 0.056438 oz |
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