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2N5551BU

Trans GP BJT NPN 160V 0.6A 625mW 3-Pin TO-92 Bag

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  • Part Number : 2N5551BU

  • Package/Case : TO-92-3

  • Brands : onsemi

  • Components Categories : Bipolar Transistors - BJT

  • Datesheet : 2N5551BU DataSheet (PDF)

Quick Inquiry

Please submit RFQ for 2N5551BU or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of 2N5551BU

The High Voltage NPN Bipolar Transistor is designed for general purpose switching applications. The device is housed in the TO-92 package, which is designed for medium power applications.

Key Features

  • Pb-Free Packages are Available

Application

  • General purpose high voltage amplifiers
  • Gas discharge display drivers

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer onsemi Product Category Bipolar Transistors - BJT
RoHS Details Mounting Style Through Hole
Package / Case TO-92-3 Transistor Polarity NPN
Configuration Single Collector- Emitter Voltage VCEO Max 160 V
Collector- Base Voltage VCBO 180 V Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 200 mV Maximum DC Collector Current 600 mA
Pd - Power Dissipation 625 mW Gain Bandwidth Product fT 300 MHz
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Series 2N5551 Brand onsemi / Fairchild
Continuous Collector Current 600 mA DC Collector/Base Gain hfe Min 80
DC Current Gain hFE Max 250 Height 4.7 mm
Length 4.7 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 10000 Subcategory Transistors
Technology Si Width 3.93 mm
Part # Aliases 2N5551BU_NL Unit Weight 0.007055 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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