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2N3501UB

Trans GP BJT NPN 150V 0.3A 500mW 4-Pin CSOT-23

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Overview of 2N3501UB

A truly versatile component, the 2N3501UB transistor is designed to meet the challenges of modern electronics. Its TO-92 package and robust specifications, including a collector current (Ic) rating of 300mA, a power dissipation (Pd) rating of 625mW, and a collector-base voltage (Vcbo) rating of 30V, make it an attractive choice for amplification and switching applications. With a maximum DC current gain (hfe) of 350 at a collector current of 100mA and a minimum DC current gain of 50 at a collector current of 10mA, this transistor excels in low-power amplification and signal switching tasks. The base-emitter voltage (Vbe) of 0.7V at a collector current of 100mA further enhances its performance. Whether used in audio amplifiers, discrete voltage regulators, oscillators, or low-frequency signal amplifiers, the 2N3501UB transistor is a dependable and versatile solution

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Package Bulk Product Status Active
Transistor Type NPN Current - Collector (Ic) (Max) 300 mA
Voltage - Collector Emitter Breakdown (Max) 150 V Vce Saturation (Max) @ Ib, Ic 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max) 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
Power - Max 500 mW Operating Temperature -65°C ~ 200°C (TJ)
Grade Military Qualification MIL-PRF-19500/366
Mounting Type Surface Mount Package / Case 3-SMD, No Lead
Supplier Device Package UB Base Product Number 2N3501

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