MT40A512M16LY-075:E DDR4 SDRAM

DDR SDRAM, or Double Data Rate Synchronous Dynamic Random-Access Memory, was introduced as a successor to SDRAM in the early 2000s. It was developed to improve the performance of memory modules by allowing data to be transferred on both the rising and falling edges of the clock signal, effectively doubling the data transfer rate compared to SDRAM. DDR4 SDRAM, the fourth generation of DDR technology, was introduced in 2014. It brought several advancements over its predecessor, DDR3, including higher data transfer rates, lower operating voltage, and improved power efficiency. DDR4 also introduced new features, such as higher memory densities and improved error detection and correction capabilities. These advancements have made DDR4 the preferred choice for modern computing systems, offering improved performance and efficiency for a wide range of applications. The MT40A512M16LY-075:E DDR4 SDRAM is a cutting-edge memory module that plays a crucial role in modern electronics. In this article, we will explore the MT40A512M16LY-075:E DDR4 features, pin configuration, applications, datasheet, and more details about this DDR4 SDRAM module.

Overview of MT40A512M16LY-075:E

The MT40A512M16LY-075:E is a specific model of DDR4 SDRAM known for its high-speed performance and reliability. It is internally configured with eight banks and utilizes an 8n-prefetch architecture for high-speed operation, enabling the interface to transfer two data words per clock cycle at the I/O pins. A single READ or WRITE operation for the MT40A512M16LY-075:E DDR4 SDRAM consists of a single 8n-bit wide, four-clock data transfer at the internal DRAM core and two corresponding n-bit wide, one-half-clock-cycle data transfers at the I/O pins. This DDR4 SDRAM offers increased data transfer speeds, improved reliability, and lower power consumption compared to previous DDR3 technology. Its performance and reliability make it suitable for use in a wide range of applications, from desktop computers to servers and networking equipment.

MT40A512M16LY-075:E Features

• VDD = VDDQ = 1.2V ±60mV
• VPP = 2.5V, –125mV, +250mV
• On-die, internal, adjustable VREFDQ generation
• 1.2V pseudo-open-drain I/O
• Refresh time of 8192-cycle at TC temperature range:
• 64ms at -40°C to 85°C
• 32ms at >85°C to 95°C
• 16ms at >95°C to 105°C
• 8 internal banks: 2 groups of 4 banks each
• 8n-bit prefetch architecture
• Programmable data strobe preambles
• Data strobe preamble training
• Command/Address latency (CAL)
• Multipurpose register READ and WRITE capability.
• Write leveling
• Self-refresh mode
• Low-power auto self-refresh (LPASR)
• Temperature controlled refresh (TCR)
• Fine granularity refresh
• Self-refresh abort
• Maximum power saving
• Output driver calibration
• Nominal, park, and dynamic on-die termination (ODT)
• Data bus inversion (DBI) for data bus
• Command/Address (CA) parity
• Databus write cyclic redundancy check (CRC)
• Per-DRAM addressability
• Connectivity test
• JEDEC JESD-79-4 compliant
• sPPR and hPPR capability
• MBIST-PPR support (Die Revision R only)

MT40A512M16LY-075:E Specifications

MT40A512M16LY-075:E Functional Block Diagram

MT40A512M16LY-075:E Pin Configuration

MT40A512M16LY-075:E CAD Model

MT40A512M16LY-075 E Symbol

MT40A512M16LY-075 E Footprint

MT40A512M16LY-075 E 3D Model

MT40A512M16LY-075:E Simplified State Diagram

How Does MT40A512M16LY-075:E Work

The MT40A512M16LY-075:E DDR4 SDRAM is a high-speed dynamic random-access memory configured internally with sixteen banks (4 bank groups with 4 banks for each bank group) for x4/x8 devices and with eight banks for each bank group (2 bank groups with 4 banks each) for x16 devices. It utilizes a double data rate (DDR) architecture to achieve high-speed operation. The DDR4 architecture is an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single read or write access for a device module effectively consists of a single 8n-bit-wide, four-clock-cycle-data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins.

Accesses to the device are burst-oriented, starting at a selected location and continuing for a burst length of eight or a chopped burst of four in a programmed sequence. Operation begins with the registration of an ACTIVE command, followed by a READ or WRITE command. The address bits registered coincident with the ACTIVE command are used to select the bank and row to be accessed (BG[1:0] selects the bank group for x4/x8, and BG0 selects the bank group for x16; BA[1:0] select the bank, and A[17:0] select the row).

The address bits registered coincident with the READ or WRITE command are used to select the starting column location for the burst operation, determine if the auto PRECHARGE command is to be issued (via A10), and select BC4 or BL8 mode on-the-fly (OTF) (via A12) if enabled in the mode register.

Before normal operation, the device must be powered up and initialized in a predefined manner. The following sections provide detailed information covering device reset and initialization, register definition, command descriptions, and device operation.

Note: The use of the NOP command is allowed only when exiting maximum power saving mode or when entering gear-down mode.

Performance and Endurance of MT40A512M16LY-075:E

A. Read and Write Speeds of MT40A512M16LY-075:E

The MT40A512M16LY-075:E DDR4 SDRAM module offers high-speed data transfer rates, with read and write speeds ranging from 1600 MT/s to 3200 MT/s. These speeds ensure rapid access to data and efficient operation in high-performance computing environments.

B. Endurance Ratings and Lifespan of MT40A512M16LY-075:E

DDR4 SDRAM modules, including the MT40A512M16LY-075:E, are designed to offer high endurance and reliability. They are typically rated for a large number of write cycles, ensuring a long lifespan even under heavy usage conditions. The exact endurance ratings can vary depending on the specific module and manufacturer specifications.

C. Factors Affecting Performance and Endurance

Several factors can affect the performance and endurance of the MT40A512M16LY-075:E DDR4 SDRAM module, including:

• Operating Temperature: Higher temperatures can reduce performance and lifespan, so proper cooling is essential.
• Voltage and Power Supply Quality: Fluctuations in voltage or poor power supply quality can impact stability and longevity.
• Workload and Usage Patterns: Heavy workloads or continuous usage can affect the lifespan of the module.
• Environmental Conditions: Exposure to moisture, dust, or other contaminants can impact performance and longevity.

It's important to operate the MT40A512M16LY-075:E DDR4 SDRAM module within its specified operating conditions to ensure optimal performance and longevity.

Advantages of MT40A512M16LY-075:E

Improved Performance and Speed

DDR4 SDRAM offers improved performance and speed compared to its predecessors, allowing for faster data access and processing. This is achieved through higher clock speeds and improved data transfer rates.

Higher Bandwidth

DDR4 SDRAM provides higher bandwidth compared to DDR3, allowing for more data to be transferred simultaneously. This results in improved overall system performance, especially in applications that require high data throughput.

Lower Power Consumption

DDR4 SDRAM operates at a lower voltage compared to DDR3, resulting in lower power consumption. This makes DDR4 more energy-efficient and helps reduce heat generation in electronic devices, leading to longer battery life in mobile devices and lower energy costs in data centers.

Increased Reliability and Stability

DDR4 SDRAM includes features such as improved error detection and correction capabilities, which enhance the reliability and stability of memory operations. This helps prevent data corruption and system crashes, leading to a more reliable computing experience.

MT40A512M16LY-075:E Application

Use in Desktop and Laptop Computers

The MT40A512M16LY-075:E is commonly used in desktop and laptop computers for its high-speed performance and reliability. It helps improve overall system performance, allowing for faster data access and processing.

Application in Servers and Data Centers

The MT40A512M16LY-075:E is used in servers and data centers for its high capacity and reliability. It enhances server performance and enables them to handle large amounts of data efficiently.

Implementation of Networking Equipment

The MT40A512M16LY-075:E is also used in networking equipment, such as routers and switches, for its high-speed data transfer capabilities. It helps improve the performance and reliability of networking devices, ensuring smooth data transmission.

MT40A512M16LY-075:E Package

MT40A512M16LY-075:E Manufacturer

Micron Technology, Inc., commonly known as Micron, is a global leader in the semiconductor industry, specializing in memory and storage solutions. The company offers a wide range of products, including DRAM, NAND flash memory, and SSDs, catering to various applications such as computing, networking, automotive, and mobile devices. Micron is known for its commitment to innovation, consistently delivering high-performance, high-quality products that meet the demanding requirements of today's technology-driven world. With a strong focus on research and development, Micron continues to push the boundaries of semiconductor technology, driving advancements in memory and storage solutions.

MT40A512M16LY-075:E Datasheet

Download MT40A512M16LY-075:E Datasheet PDF.

Conclusion

In conclusion, the MT40A512M16LY-075:E DDR4 SDRAM offers high-speed performance, reliability, and efficiency, making it an ideal choice for a wide range of applications. With its improved performance and speed, higher bandwidth, lower power consumption, and increased reliability and stability, the MT40A512M16LY-075:E is a versatile memory module that can enhance the performance of desktop and laptop computers, servers, data centers, and networking equipment. Its advanced features and benefits make it a valuable component in modern computing systems, contributing to their overall efficiency and performance.

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