VRF2933 (2)
VRF2933 is available from Microchip at Xecor. Designed for high-power RF amplification, the VRF2933 offers exceptional performance with a power output of 300W, a gain of 22dB, and operation at frequencies up to 30MHz. Available in the M177 package, it is ideal for telecommunications, industrial RF systems, and high-power amplification applications. Whether used in broadcast equipment, RF transmitters, or radar systems, this series ensures reliable performance, high efficiency, and scalability for demanding RF applications. Xecor is an authorized distributor for Microchip. Please view our extensive selection of the VRF2933 series below.
| Part Number | Description | Package | Inventory | Add To Bom |
|---|---|---|---|---|
| VRF2933 | Trans RF MOSFET N-CH 170V 42A 5-Pin Style M-177 Box | Style M-177 | 2,524 | |
| VRF2933MP | Trans RF MOSFET N-CH 170V 42A 5-Pin Style M-177 Box | M177 | 7,437 |
Key Featrues
High Power Output (300W): This RF MOSFET is capable of delivering up to 300W of power output, making it suitable for high-power RF applications such as RF amplifiers, transmitters, and communication systems. This feature ensures robust performance in demanding environments.
High Frequency Operation (30MHz): With a frequency capability of 30MHz, this MOSFET is ideal for applications requiring high-frequency signal processing, such as RF communication and broadcasting. This enables efficient signal transmission and reception in various communication systems.
High Gain (22dB): The device offers a gain of 22dB, which enhances signal amplification efficiency. This is particularly beneficial in RF amplifiers where high gain is crucial for improving signal strength and reducing noise interference.
N-Channel Configuration: The N-Channel MOSFET configuration allows for efficient switching and amplification of RF signals. This configuration is commonly used in RF applications due to its fast switching speeds and low on-resistance, contributing to overall system efficiency.
Robust Voltage Rating (170V): With a rated voltage of 170V, this MOSFET can handle high voltage levels, ensuring reliable operation in high-voltage RF circuits. This feature makes it suitable for use in power amplifiers and other high-voltage RF applications, enhancing durability and performance.
High Frequency Operation (30MHz): With a frequency capability of 30MHz, this MOSFET is ideal for applications requiring high-frequency signal processing, such as RF communication and broadcasting. This enables efficient signal transmission and reception in various communication systems.
High Gain (22dB): The device offers a gain of 22dB, which enhances signal amplification efficiency. This is particularly beneficial in RF amplifiers where high gain is crucial for improving signal strength and reducing noise interference.
N-Channel Configuration: The N-Channel MOSFET configuration allows for efficient switching and amplification of RF signals. This configuration is commonly used in RF applications due to its fast switching speeds and low on-resistance, contributing to overall system efficiency.
Robust Voltage Rating (170V): With a rated voltage of 170V, this MOSFET can handle high voltage levels, ensuring reliable operation in high-voltage RF circuits. This feature makes it suitable for use in power amplifiers and other high-voltage RF applications, enhancing durability and performance.
Applications
High-Power RF Amplification: The VRF2933 MOSFET is ideal for high-power RF amplification in communication systems, such as radio transmitters and broadcast equipment. Its 300W output power and 22dB gain ensure robust signal amplification, making it suitable for long-range communication and high-frequency applications in industrial and military environments.
RF Signal Processing in Radar Systems: The VRF2933 is well-suited for RF signal processing in radar systems, where high power and frequency performance are critical. Its 30MHz frequency capability and N-Channel configuration enable efficient signal modulation and amplification, ensuring reliable target detection and tracking in aerospace and defense applications.
Industrial RF Heating Systems: The VRF2933 can be used in industrial RF heating systems, where high-power RF signals are required for processes like dielectric heating or plasma generation. Its 300W output power and 50V test voltage ensure efficient energy transfer, making it ideal for applications in material processing and manufacturing.
Amateur Radio Amplifiers: The VRF2933 is an excellent choice for amateur radio amplifiers, providing high gain and power output for enhanced signal transmission. Its 22dB gain and 300W power output make it suitable for hobbyists and enthusiasts looking to boost their radio signals for long-distance communication.
RF Signal Processing in Radar Systems: The VRF2933 is well-suited for RF signal processing in radar systems, where high power and frequency performance are critical. Its 30MHz frequency capability and N-Channel configuration enable efficient signal modulation and amplification, ensuring reliable target detection and tracking in aerospace and defense applications.
Industrial RF Heating Systems: The VRF2933 can be used in industrial RF heating systems, where high-power RF signals are required for processes like dielectric heating or plasma generation. Its 300W output power and 50V test voltage ensure efficient energy transfer, making it ideal for applications in material processing and manufacturing.
Amateur Radio Amplifiers: The VRF2933 is an excellent choice for amateur radio amplifiers, providing high gain and power output for enhanced signal transmission. Its 22dB gain and 300W power output make it suitable for hobbyists and enthusiasts looking to boost their radio signals for long-distance communication.
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