LM5110 (3)
TIThe LM5110 is available from TI at Xecor. Designed for driving two N-channel MOSFETs in high-performance applications, the LM5110 offers key features such as 5A sink/3A source current capability, fast propagation times (25-ns typical), and independent inputs compatible with TTL logic. Available in multiple package options, including SOIC-8 and thermally-enhanced WSON-10, it is ideal for power supply, motor control, and industrial automation applications. Whether used in automotive, telecommunications, or renewable energy systems, this series ensures high efficiency, reliability, and flexibility for demanding applications. Xecor is an authorized distributor for TI. Please view our extensive selection of the LM5110 series below.
| Part Number | Description | Package | Inventory | Add To Bom |
|---|---|---|---|---|
| LM5110-1M/NOPB | This IC serves as a gate driver specifically for MOSFETs, offering efficient switching in a compact SO8 package | SOIC-8 | 9,736 | |
| LM5110-2M | Dual 5A Compound Gate Driver,LM5110-2M | SOIC-8 | 4,787 | |
| LM5110-1M | Dual 5A Compound Gate Driver,LM5110-1M | SOIC-8 | 4,262 |
Key Featrues
High Peak Output Current: The LM5110 dual gate driver features a peak output current of 5A for sinking and 3A for sourcing, enabling it to drive high-power MOSFETs efficiently. This capability ensures robust performance in demanding applications such as motor drives and power inverters, where high current handling is critical.
Compound CMOS and Bipolar Outputs: The combination of CMOS and bipolar transistors in the output stage reduces output current variation with voltage and temperature. This design enhances the driver's reliability and consistency across different operating conditions, making it suitable for applications with fluctuating environmental factors.
Negative Output Voltage Capability: With separate input and output ground pins, the LM5110 can drive MOSFET gates with both positive and negative VGS voltages. This feature allows for greater flexibility in circuit design, particularly in applications requiring precise control of MOSFET switching, such as in high-frequency power converters.
Fast Propagation and Switching Times: The device offers fast propagation times (25 ns typical) and rapid rise/fall times (14 ns/12 ns with a 2-nF load). These characteristics minimize switching losses and improve efficiency in high-speed switching applications, such as DC-DC converters and Class-D amplifiers.
Undervoltage Lockout Protection: The LM5110 includes undervoltage lockout protection, which ensures safe operation by disabling the outputs when the supply voltage falls below a specified threshold. This feature enhances system reliability by preventing improper operation during low-voltage conditions, such as during power-up or brownout scenarios.
Compound CMOS and Bipolar Outputs: The combination of CMOS and bipolar transistors in the output stage reduces output current variation with voltage and temperature. This design enhances the driver's reliability and consistency across different operating conditions, making it suitable for applications with fluctuating environmental factors.
Negative Output Voltage Capability: With separate input and output ground pins, the LM5110 can drive MOSFET gates with both positive and negative VGS voltages. This feature allows for greater flexibility in circuit design, particularly in applications requiring precise control of MOSFET switching, such as in high-frequency power converters.
Fast Propagation and Switching Times: The device offers fast propagation times (25 ns typical) and rapid rise/fall times (14 ns/12 ns with a 2-nF load). These characteristics minimize switching losses and improve efficiency in high-speed switching applications, such as DC-DC converters and Class-D amplifiers.
Undervoltage Lockout Protection: The LM5110 includes undervoltage lockout protection, which ensures safe operation by disabling the outputs when the supply voltage falls below a specified threshold. This feature enhances system reliability by preventing improper operation during low-voltage conditions, such as during power-up or brownout scenarios.
Applications
High-Power MOSFET Switching: The LM5110 is ideal for driving high-power MOSFETs in switching applications such as DC-DC converters, motor drives, and power inverters. Its 5A sink/3A source current capability and fast rise/fall times ensure efficient and reliable switching, making it suitable for industrial and automotive power systems.
Negative Voltage Gate Drive: The LM5110 is well-suited for applications requiring negative voltage gate drive, such as synchronous rectifiers and high-side MOSFET drivers. Its ability to swing outputs from VCC to VEE (which can be negative) ensures robust performance in power supply designs and battery management systems.
Parallel Driver Configuration: The LM5110 can be used in parallel to double the drive current capability, making it ideal for driving large MOSFET arrays in high-current applications like uninterruptible power supplies (UPS) and solar inverters. Its independent inputs and outputs allow for flexible and scalable designs.
Low-Power Shutdown Mode: The LM5110's shutdown input feature makes it suitable for energy-efficient applications such as portable electronics and IoT devices. By enabling low-power mode when not in use, it helps extend battery life while maintaining reliable performance in power-sensitive environments.
Negative Voltage Gate Drive: The LM5110 is well-suited for applications requiring negative voltage gate drive, such as synchronous rectifiers and high-side MOSFET drivers. Its ability to swing outputs from VCC to VEE (which can be negative) ensures robust performance in power supply designs and battery management systems.
Parallel Driver Configuration: The LM5110 can be used in parallel to double the drive current capability, making it ideal for driving large MOSFET arrays in high-current applications like uninterruptible power supplies (UPS) and solar inverters. Its independent inputs and outputs allow for flexible and scalable designs.
Low-Power Shutdown Mode: The LM5110's shutdown input feature makes it suitable for energy-efficient applications such as portable electronics and IoT devices. By enabling low-power mode when not in use, it helps extend battery life while maintaining reliable performance in power-sensitive environments.
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