DMN60 (2)
DIODESDMN60 is available from DIODES at Xecor. Designed for small signal switching applications, the DMN60 offers high performance with a drain-source breakdown voltage of 60V, a continuous drain current of 300mA, and low drain-source resistance. Available in the compact SOT-23-3 package, it is ideal for portable electronics, power management systems, and low-power switching circuits. Whether used in consumer electronics, industrial controls, or telecommunications, this series ensures reliable performance, energy efficiency, and scalability for demanding applications. Xecor is an authorized distributor for DIODES. Please view our extensive selection of the DMN60 series below.
| Part Number | Description | Package | Inventory | Add To Bom |
|---|---|---|---|---|
| DMN60H080DS-7 | N-CHANNEL ENHANCEMENT MODE FIELD MOSFET | SOT23-3 | 6,672 | |
| DMN601K-7 | SOT23 packaged N-MOSFET transistor with 0.8A Idm and 350mW power dissipation capability | SOT23-3 | 8,425 |
Key Featrues
N-Channel Enhancement Mode: This feature allows the transistor to operate in enhancement mode, meaning it requires a positive gate-source voltage to turn on. This enhances control over the transistor's switching behavior, making it suitable for low-power applications and improving efficiency in switching circuits.
60V Drain-Source Breakdown Voltage: The transistor can handle up to 60V between the drain and source, making it ideal for medium-voltage applications. This high breakdown voltage ensures reliable performance in circuits where voltage spikes or fluctuations may occur.
300mA Continuous Drain Current: With a maximum continuous drain current of 300mA, this transistor is well-suited for small-signal applications, such as signal amplification or low-power switching. This feature ensures stable operation in low-current environments.
SOT-23-3 Package: The compact SOT-23-3 surface-mount package makes the transistor ideal for space-constrained designs, such as portable electronics or IoT devices. Its small footprint and ease of assembly contribute to efficient PCB design and manufacturing.
Low Drain-Source On Resistance (2Ω): The low on-resistance minimizes power loss and heat generation when the transistor is in the
inchon inch state. This improves efficiency, especially in switching applications, and allows for better thermal management in compact designs.
Wide Operating Temperature Range (-65°C to +150°C): This transistor can operate reliably in extreme temperatures, making it suitable for industrial, automotive, or outdoor applications where environmental conditions may vary significantly. This ensures consistent performance across a wide range of use cases.
60V Drain-Source Breakdown Voltage: The transistor can handle up to 60V between the drain and source, making it ideal for medium-voltage applications. This high breakdown voltage ensures reliable performance in circuits where voltage spikes or fluctuations may occur.
300mA Continuous Drain Current: With a maximum continuous drain current of 300mA, this transistor is well-suited for small-signal applications, such as signal amplification or low-power switching. This feature ensures stable operation in low-current environments.
SOT-23-3 Package: The compact SOT-23-3 surface-mount package makes the transistor ideal for space-constrained designs, such as portable electronics or IoT devices. Its small footprint and ease of assembly contribute to efficient PCB design and manufacturing.
Low Drain-Source On Resistance (2Ω): The low on-resistance minimizes power loss and heat generation when the transistor is in the
inchon inch state. This improves efficiency, especially in switching applications, and allows for better thermal management in compact designs.
Wide Operating Temperature Range (-65°C to +150°C): This transistor can operate reliably in extreme temperatures, making it suitable for industrial, automotive, or outdoor applications where environmental conditions may vary significantly. This ensures consistent performance across a wide range of use cases.
Applications
Low-Power Switching Applications: The N-Channel MOSFET is ideal for low-power switching applications, such as in portable electronics or battery-powered devices. Its low drain-source resistance (Rds On) and low continuous drain current (Id) make it suitable for efficiently controlling small loads while minimizing power loss, ensuring extended battery life in devices like wearables or IoT sensors.
Signal Amplification in Audio Circuits: This MOSFET is well-suited for signal amplification in audio circuits, such as headphone amplifiers or small audio preamps. Its N-Channel enhancement mode and low input capacitance allow for precise control of audio signals, ensuring high fidelity and low distortion in compact audio devices.
Load Switching in Automotive Electronics: With a drain-source breakdown voltage of 60V, this MOSFET is perfect for load switching in automotive electronics, such as controlling lights, sensors, or small motors. Its robust design and ability to handle moderate power dissipation make it reliable for use in harsh automotive environments.
Power Management in Portable Devices: The MOSFET is an excellent choice for power management in portable devices, such as smartphones or tablets. Its small SOT-23 package and low power dissipation enable efficient power routing and switching, ensuring optimal performance and thermal management in space-constrained designs.
Signal Amplification in Audio Circuits: This MOSFET is well-suited for signal amplification in audio circuits, such as headphone amplifiers or small audio preamps. Its N-Channel enhancement mode and low input capacitance allow for precise control of audio signals, ensuring high fidelity and low distortion in compact audio devices.
Load Switching in Automotive Electronics: With a drain-source breakdown voltage of 60V, this MOSFET is perfect for load switching in automotive electronics, such as controlling lights, sensors, or small motors. Its robust design and ability to handle moderate power dissipation make it reliable for use in harsh automotive environments.
Power Management in Portable Devices: The MOSFET is an excellent choice for power management in portable devices, such as smartphones or tablets. Its small SOT-23 package and low power dissipation enable efficient power routing and switching, ensuring optimal performance and thermal management in space-constrained designs.
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