2SC259 (1)

2SC259 is available at Xecor.Designed for high-frequency amplification and switching applications, the 2SC259 offers a robust NPN transistor with a collector-emitter breakdown voltage of 120V, a transition frequency of 200MHz, and a power dissipation of 1.2W. Available in TO-126B-A1 (TO-225AA) through-hole packages, it is ideal for power management, industrial controls, and RF amplification circuits. Whether used in audio amplifiers, power supplies, or telecommunications equipment, this series ensures reliable performance, high gain (hFE ≥ 90), and thermal stability (up to 150°C junction temperature) for demanding applications.Please view our extensive selection of the 2SC259 series below.

Part Number Description Package Inventory Add To Bom
2SC2590 High Power NPN Silicon Transistor with 120V V(BR)CEO TO-225AA 6,446