2N2218 (2)
MICROCHIPThe 2N2218 is available from MICROCHIP at Xecor. Designed for general-purpose amplification and switching applications, the 2N2218 offers high current handling (up to 800 mA), a collector-emitter breakdown voltage of 30 V, and a maximum power dissipation of 800 mW. Available in the TO-205AD (TO-39-3 Metal Can) package, it is ideal for industrial, automotive, and telecommunications applications. Whether used in signal amplification, motor control, or power regulation, this series ensures reliable performance and durability for demanding applications. Xecor is an authorized distributor for MICROCHIP. Please view our extensive selection of the 2N2218 series below.
| Part Number | Description | Package | Inventory | Add To Bom |
|---|---|---|---|---|
| 2N2218A | Trans GP BJT NPN 50V 0.8A 800mW 3-Pin TO-39 Bag | TO39-3 | 6,580 | |
| 2N2218 | With a high current gain and low input capacitance | TO-39-3 | 5,997 |
Key Featrues
High Collector Current Capability (800 mA): The transistor can handle up to 800 mA of collector current, making it suitable for medium-power applications such as amplifiers, switching circuits, and motor drivers, where higher current handling is required for efficient performance.
Breakdown Voltage (30 V): With a collector-emitter breakdown voltage of 30 V, this transistor is ideal for low-voltage applications, ensuring reliable operation in circuits operating within this voltage range, such as signal amplification or low-power switching.
Low Vce Saturation (1.6V @ 500mA): The low saturation voltage of 1.6V at 500 mA reduces power loss during switching operations, enhancing efficiency in applications like switching regulators or relay drivers.
Wide Operating Temperature Range (-55°C to 200°C): The transistor can operate in extreme temperatures, making it suitable for harsh environments, such as automotive, industrial, or aerospace applications, where reliability under varying conditions is critical.
Metal Can Package (TO-39): The TO-39 metal can package provides robust thermal performance and durability, making it ideal for high-reliability applications where heat dissipation and mechanical stability are important considerations.
Breakdown Voltage (30 V): With a collector-emitter breakdown voltage of 30 V, this transistor is ideal for low-voltage applications, ensuring reliable operation in circuits operating within this voltage range, such as signal amplification or low-power switching.
Low Vce Saturation (1.6V @ 500mA): The low saturation voltage of 1.6V at 500 mA reduces power loss during switching operations, enhancing efficiency in applications like switching regulators or relay drivers.
Wide Operating Temperature Range (-55°C to 200°C): The transistor can operate in extreme temperatures, making it suitable for harsh environments, such as automotive, industrial, or aerospace applications, where reliability under varying conditions is critical.
Metal Can Package (TO-39): The TO-39 metal can package provides robust thermal performance and durability, making it ideal for high-reliability applications where heat dissipation and mechanical stability are important considerations.
Applications
High-Power Switching Circuits: The 2N2218 NPN transistor is well-suited for high-power switching applications, such as in motor control or relay drivers. Its ability to handle up to 800 mA collector current and 30 V collector-emitter voltage makes it ideal for controlling loads in industrial automation and robotics. The TO-39 metal can package ensures robust thermal performance, even in demanding environments.
Audio Amplifiers: With a DC current gain (hFE) of 40 at 150 mA and 10 V, the 2N2218 can be used in audio amplifier circuits, particularly in the output stages of small to medium power amplifiers. Its low collector cutoff current (10 nA) ensures minimal noise, making it suitable for high-fidelity audio applications.
Signal Amplification in Sensor Interfaces: The 2N2218 can be employed in signal amplification stages for sensor interfaces, such as temperature or pressure sensors. Its high current and voltage ratings allow it to amplify weak sensor signals effectively, while its wide operating temperature range (-55°C to 200°C) ensures reliable performance in harsh environments.
Pulse and Waveform Generation: The transistor's fast switching characteristics and high power handling make it suitable for pulse and waveform generation in electronic test equipment or communication systems. It can be used in circuits like oscillators, multivibrators, or pulse generators, where precise control of timing and amplitude is required.
Audio Amplifiers: With a DC current gain (hFE) of 40 at 150 mA and 10 V, the 2N2218 can be used in audio amplifier circuits, particularly in the output stages of small to medium power amplifiers. Its low collector cutoff current (10 nA) ensures minimal noise, making it suitable for high-fidelity audio applications.
Signal Amplification in Sensor Interfaces: The 2N2218 can be employed in signal amplification stages for sensor interfaces, such as temperature or pressure sensors. Its high current and voltage ratings allow it to amplify weak sensor signals effectively, while its wide operating temperature range (-55°C to 200°C) ensures reliable performance in harsh environments.
Pulse and Waveform Generation: The transistor's fast switching characteristics and high power handling make it suitable for pulse and waveform generation in electronic test equipment or communication systems. It can be used in circuits like oscillators, multivibrators, or pulse generators, where precise control of timing and amplitude is required.
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