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ZXTC2045E6TA

BJT NPN & PNP Transistors - Bipolar 40V

Quantity Unit Price(USD) Ext. Price
1 $0.284 $0.28
10 $0.227 $2.27
30 $0.199 $5.97
100 $0.177 $17.70
500 $0.160 $80.00
1000 $0.152 $152.00

Inventory:5,502

*The price is for reference only.
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Overview of ZXTC2045E6TA

The ZXTC2045E6TA is a low-side N-channel enhancement mode vertical DMOS FET transistor designed for power management applications. This transistor features a high continuous drain current and low on-resistance, making it suitable for various switching and linear voltage regulator circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VSS: Source pin (Connected to ground)
  • VDD: Drain pin (Positive power supply connection)
  • GATE: Gate pin (Control input for the transistor)
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the ZXTC2045E6TA transistor for a visual representation.

Key Features

  • High Continuous Drain Current: The ZXTC2045E6TA offers a high continuous drain current rating, allowing it to handle high power loads efficiently.
  • Low On-Resistance: With a low on-resistance, this transistor minimizes power losses and heat generation during operation.
  • Enhancement Mode Operation: The N-channel enhancement mode design enables easy control of the transistor with a positive voltage on the gate.
  • High Speed Switching: The ZXTC2045E6TA is capable of high-speed switching transitions, making it suitable for fast-switching applications.
  • Low Threshold Voltage: The low threshold voltage ensures the transistor can be easily turned on with minimal input voltage.

Note: For detailed technical specifications, please refer to the ZXTC2045E6TA datasheet.

Application

  • Power Management: Ideal for power management applications such as voltage regulation, load switching, and power amplification.
  • Switching Circuits: Suitable for use in various switching circuits including buck converters, boost converters, and motor control.
  • LED Driver: Can be employed as an LED driver in lighting applications due to its high efficiency and fast switching capabilities.

Functionality

The ZXTC2045E6TA transistor is designed for efficient power control and management, providing reliable performance in a wide range of power electronics applications.

Usage Guide

  • Power Supply: Connect the VDD pin to the positive power supply and the VSS pin to ground.
  • Gate Control: Apply the appropriate control signal to the GATE pin to switch the transistor on and off.
  • Load Connection: Connect the load to the drain pin of the transistor for power delivery.

Frequently Asked Questions

Q: What is the maximum drain current rating of the ZXTC2045E6TA?
A: The ZXTC2045E6TA has a maximum continuous drain current rating of XXA, ensuring high-power handling capability.

Q: Can the ZXTC2045E6TA be used for high-frequency switching applications?
A: Yes, the ZXTC2045E6TA is suitable for high-speed switching due to its fast transition times and high-speed capabilities.

Equivalent

For similar functionalities, consider these alternatives to the ZXTC2045E6TA:

  • ZXTP2082GTA: A similar N-channel DMOS transistor with enhanced performance characteristics for power management applications.
  • ZXGD3101E6: This is a gate driver IC designed to control power MOSFETs efficiently in high-power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style SMD/SMT Package / Case SOT-26-6
Transistor Polarity NPN, PNP Configuration Dual
Collector- Emitter Voltage VCEO Max 30 V Collector- Base Voltage VCBO 40 V
Emitter- Base Voltage VEBO 7 V Collector-Emitter Saturation Voltage 375 mV, 375 mV
Maximum DC Collector Current 1.5 A Pd - Power Dissipation 1.7 W
Gain Bandwidth Product fT 265 MHz, 195 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series ZXTC2045
Brand Diodes Incorporated DC Collector/Base Gain hfe Min 180 at 100 mA, 2 V
DC Current Gain hFE Max 180 at 100 mA, 2 V Height 1.3 mm
Length 3.1 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Technology Si Width 1.8 mm
Unit Weight 0.000529 oz

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ZXTC2045E6TA

BJT NPN & PNP Transistors - Bipolar 40V

Inventory:

5,502