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ZXMN2F30FHTA

Small Signal Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET, 20V, 4.1A I(D)

Inventory:6,221

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Submit your quote request for ZXMN2F30FHTA using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of ZXMN2F30FHTA

The ZXMN2F30FHTA is an N-channel enhancement mode MOSFET designed for high-speed switching applications in power management and motor control circuits. It features a low threshold voltage and low on-resistance, making it suitable for efficient power switching and regulation.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate pin for controlling the MOSFET
  • D: Drain pin for the connected load
  • S: Source pin connected to the ground or common reference

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the ZXMN2F30FHTA MOSFET for a visual representation.

Key Features

  • Enhancement Mode MOSFET:The ZXMN2F30FHTA is an N-channel enhancement mode MOSFET, allowing for easy and efficient control of the switching operation.
  • Low Threshold Voltage:Features a low threshold voltage, enabling it to switch on at lower input voltages, facilitating efficient power management.
  • Low On-Resistance:With low on-resistance, it minimizes power losses and heat dissipation during power switching applications.
  • High-Speed Switching:Capable of high-speed switching operations, suitable for applications requiring fast response times.
  • Compact Package:Available in a compact and space-saving package, suitable for integration into compact electronic designs.

Note: For detailed technical specifications, please refer to the ZXMN2F30FHTA datasheet.

Application

  • Power Management: Ideal for power switching and regulation in power management circuits.
  • Motor Control: Suitable for use in motor control applications where efficient and high-speed switching is required.
  • Inverters: Used in inverter circuits for converting DC power to AC power with enhanced efficiency.

Functionality

The ZXMN2F30FHTA MOSFET is designed for high-speed switching applications, providing low on-resistance and a compact form factor for efficient power management and control.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the G (Gate) pin to control the switching behavior of the MOSFET.
  • Load Connection: Connect the load to the D (Drain) pin for the desired power switching or regulation operation.
  • Ground Connection: Connect the S (Source) pin to the ground or common reference of the system.

Frequently Asked Questions

Q: Can the ZXMN2F30FHTA be used for high-frequency switching?
A: Yes, the ZXMN2F30FHTA is suitable for high-frequency switching applications due to its high-speed switching capability.

Equivalent

For similar functionalities, consider these alternatives to the ZXMN2F30FHTA:

  • IRF540N: This is an N-channel power MOSFET with similar high-speed switching and low on-resistance characteristics.
  • IXFH50N60: An advanced N-channel IGBT with high-speed switching capabilities and enhanced voltage and current ratings.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 4.9 A Rds On - Drain-Source Resistance 45 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 600 mV
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.4 W Channel Mode Enhancement
Series ZXMN2F30 Brand Diodes Incorporated
Configuration Single Fall Time 5.6 ns
Forward Transconductance - Min 8.6 S Height 1.02 mm
Length 3.04 mm Product MOSFET Small Signals
Product Type MOSFET Rise Time 5.6 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 19.4 ns
Typical Turn-On Delay Time 2.9 ns Width 1.4 mm
Unit Weight 0.000282 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

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ZXMN2F30FHTA

Small Signal Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET, 20V, 4.1A I(D)

Inventory:

6,221
Overview of ZXMN2F30FHTA Specifications Warranty & Returns Similar Products Popular Products

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After Sales Service

What after-sales service can be provided?

We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

·Initiate the request within 90 days after the item's shipment date.

·Coordinate the return or exchange with our team.

·Keep the items in their original condition as delivered.

·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.

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Package

How to ensure that the parts will be intact during transportation?

The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.

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