• ZXMN10A11GTA SOT-223-3
ZXMN10A11GTA SOT-223-3

ZXMN10A11GTA

MOSFET N-channel UMOS 100V

Quantity Unit Price(USD) Ext. Price
1 $0.362 $0.36
10 $0.297 $2.97
30 $0.270 $8.10
100 $0.236 $23.60
500 $0.221 $110.50
1000 $0.212 $212.00

Inventory:6,545

*The price is for reference only.
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Overview of ZXMN10A11GTA

The ZXMN10A11GTA is an N-channel enhancement mode MOSFET transistor designed for high-speed power switching applications. It features a low on-resistance and high current-handling capability, making it ideal for use in power management circuits, motor control, and other high-frequency switching applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the ZXMN10A11GTA MOSFET for a visual representation.

Key Features

  • Enhancement Mode MOSFET: The ZXMN10A11GTA is an enhancement mode MOSFET that requires a positive voltage at the gate relative to the source for conduction.
  • Low On-Resistance: This MOSFET offers low on-resistance to minimize power losses and improve efficiency in switching applications.
  • High Current Capability: With its high current-handling capability, the ZXMN10A11GTA can efficiently handle high current loads.
  • Fast Switching Speed: The MOSFET has a fast switching speed, making it suitable for high-speed power switching applications.
  • Robust Construction: Designed to withstand high power and voltage levels, ensuring reliability in demanding applications.

Note: For detailed technical specifications, please refer to the ZXMN10A11GTA datasheet.

Application

  • Power Management: Ideal for use in power management circuits to control and switch power efficiently.
  • Motor Control: Suitable for motor control applications where high-speed switching of power is required.
  • Inverter Circuits: Can be used in inverter circuits for converting DC power to AC power in various electronic systems.

Functionality

The ZXMN10A11GTA MOSFET is designed to provide efficient and reliable power switching capabilities in high-speed applications requiring high current handling. It enhances the performance of power management and motor control circuits.

Usage Guide

  • Gate Control: Apply a positive voltage at the gate relative to the source to turn the MOSFET on for conduction.
  • Load Connection: Connect the load between the drain and the power supply with the source connected to ground.
  • Heat Dissipation: Ensure proper heat sinking to manage heat dissipation during high-current operation.

Frequently Asked Questions

Q: Is the ZXMN10A11GTA suitable for high-frequency applications?
A: Yes, the fast switching speed of the ZXMN10A11GTA makes it suitable for high-frequency power switching applications.

Equivalent

For similar functionalities, consider these alternatives to the ZXMN10A11GTA:

  • IRF3205: A high-power N-channel MOSFET with similar current-handling capabilities for power switching applications.
  • BUZ11: This N-channel MOSFET offers comparable performance and characteristics to the ZXMN10A11GTA for power management and control applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case SOT-223-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 100 V Id - Continuous Drain Current 2.4 A
Rds On - Drain-Source Resistance 350 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 5.4 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2 W Channel Mode Enhancement
Series ZXMN10A Brand Diodes Incorporated
Configuration Single Fall Time 3.5 ns
Forward Transconductance - Min 4 S Height 1.65 mm
Length 6.7 mm Product Type MOSFET
Rise Time 1.7 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-Off Delay Time 7.4 ns
Typical Turn-On Delay Time 2.7 ns Width 3.7 mm
Unit Weight 0.003951 oz

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ZXMN10A11GTA

MOSFET N-channel UMOS 100V

Inventory:

6,545