• packageimg
packageimg

ZXMHC3F381N8TC

Transistor with N/P-MOSFET technology, providing unipolar functionality at voltage ranges of 30V and -30V, and current ratings of 3

Quantity Unit Price(USD) Ext. Price
1 $0.560 $0.56
10 $0.448 $4.48
30 $0.391 $11.73
100 $0.349 $34.90
500 $0.316 $158.00
1000 $0.299 $299.00

Inventory:3,958

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for ZXMHC3F381N8TC using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of ZXMHC3F381N8TC

The ZXMHC3F381N8TC is a dual N-channel MOSFET designed for high-speed switching applications in various electronic circuits. This MOSFET features low on-resistance and fast switching characteristics, making it suitable for power management and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE1: Gate terminal for MOSFET 1
  • SOURCE1: Source terminal for MOSFET 1
  • DRAIN1: Drain terminal for MOSFET 1
  • GATE2: Gate terminal for MOSFET 2
  • SOURCE2: Source terminal for MOSFET 2
  • DRAIN2: Drain terminal for MOSFET 2
  • VSS: Ground connection
  • VDD: Positive power supply

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the ZXMHC3F381N8TC for a visual representation.

Key Features

  • Dual N-Channel MOSFET: Provides two N-channel MOSFETs for independent switching control.
  • Low On-Resistance: The ZXMHC3F381N8TC offers low on-resistance for efficient power management.
  • Fast Switching Speed: With fast switching characteristics, this MOSFET is ideal for high-speed applications.
  • High Current Handling Capability: Suitable for applications requiring high current handling capacity.
  • Wide Voltage Range: Operates within a wide voltage range, making it versatile for different circuit designs.

Note: For detailed technical specifications, please refer to the ZXMHC3F381N8TC datasheet.

Application

  • Power Management: Ideal for power switching and management functions in electronic circuits.
  • Motor Control: Suitable for motor control applications in robotics, automation, and other systems.
  • High-Speed Switching: Used in circuits requiring rapid switching for signal processing or power delivery.

Functionality

The ZXMHC3F381N8TC dual N-channel MOSFET is designed to control the flow of power in electronic circuits with high efficiency and speed. It offers reliable performance in various switching applications.

Usage Guide

  • Power Supply: Connect VDD (Pin 7) to the positive supply voltage and VSS (Pin 6) to the ground.
  • Gate Control: Apply appropriate voltage levels to the GATE pins to control the switching of the MOSFETs.
  • Load Connections: Connect the DRAIN and SOURCE pins of each MOSFET to the respective components in the circuit.

Frequently Asked Questions

Q: Is the ZXMHC3F381N8TC suitable for PWM applications?
A: Yes, the ZXMHC3F381N8TC can be used in pulse-width modulation (PWM) applications for precise control of power delivery.

Equivalent

For similar functionalities, consider these alternatives to the ZXMHC3F381N8TC:

  • FDS8880: An N-channel MOSFET with comparable specifications and performance characteristics.
  • IRF3205: This MOSFET offers similar features and is widely used in power electronics applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOIC-8 Transistor Polarity N-Channel, P-Channel
Number of Channels 4 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 4.98 A, 4.13 A Rds On - Drain-Source Resistance 33 mOhms, 55 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1 V
Qg - Gate Charge 9 nC, 12.7 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 870 mW
Channel Mode Enhancement Series ZXMHC3
Brand Diodes Incorporated Configuration Quad
Fall Time 6.3 ns, 21 ns Forward Transconductance - Min 11.8 S, 14 S
Product Type MOSFET Rise Time 3.3 ns, 3 ns
Factory Pack Quantity 2500 Subcategory MOSFETs
Transistor Type 2 N-Channel, 2 P-Channel Type H-Bridge
Typical Turn-Off Delay Time 11.5 ns, 30 ns Typical Turn-On Delay Time 2.5 ns, 1.9 ns
Unit Weight 0.026455 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment ?

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

packageimg

ZXMHC3F381N8TC

Transistor with N/P-MOSFET technology, providing unipolar functionality at voltage ranges of 30V and -30V, and current ratings of 3

Inventory:

3,958