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ZVN2106G

Single N-Channel MOSFET with 60V voltage rating and 710mA current rating in SOT223 package

Inventory:5,323

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Submit your quote request for ZVN2106G using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of ZVN2106G

The ZVN2106G is an enhancement-mode vertical DMOS FET (Field-Effect Transistor) designed for use in a wide range of switching and amplification applications. This FET features a high input impedance, low on-state resistance, and a fast switching speed, making it suitable for various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the ZVN2106G FET for a visual representation.

Key Features

  • Enhancement-Mode FET: The ZVN2106G is an enhancement-mode FET, allowing for easy and controlled turn-on with positive gate voltage.
  • High Input Impedance: This FET offers high input impedance, making it suitable for applications requiring minimal input loading.
  • Low On-State Resistance: With low on-state resistance, the ZVN2106G minimizes power loss and heat generation during operation.
  • Fast Switching Speed: The fast switching speed of this FET enables rapid transitions between on and off states in electronic circuits.
  • High Breakdown Voltage: The ZVN2106G features a high breakdown voltage, providing robustness and reliability in high-voltage applications.

Note: For detailed technical specifications, please refer to the ZVN2106G datasheet.

Application

  • Switching Circuits: Ideal for use in various switching applications such as relay and motor controls.
  • Amplification: Suitable for amplification and signal processing in audio and RF circuits.
  • Voltage Regulation: Can be utilized in voltage regulation and power management circuits.

Functionality

The ZVN2106G enhancement-mode FET provides reliable and efficient switching and amplification capabilities in electronic circuits, offering high performance and versatility.

Usage Guide

  • Gate Connection: Connect the gate (G) to the control signal or voltage source to control the FET's conductivity.
  • Drain and Source Connections: Connect the drain (D) and source (S) terminals to the load and ground, respectively, based on the circuit requirements.
  • Biasing: Ensure proper biasing as per the recommended operating conditions in the datasheet to optimize FET performance.

Frequently Asked Questions

Q: Can the ZVN2106G be used in high-frequency applications?
A: Yes, the ZVN2106G's fast switching speed makes it suitable for high-frequency switching and amplification applications.

Equivalent

For similar functionalities, consider these alternatives to the ZVN2106G:

  • ZVN2106A: This is a similar enhancement-mode FET with slightly different characteristics or package options.
  • IRF610: An enhancement-mode power MOSFET from Infineon Technologies that offers comparable performance in switching applications.
  • 2N7000: This is a commonly used small-signal N-channel MOSFET suitable for low-power switching and amplification tasks.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 710mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 1A, 10V Vgs(th) (Max) @ Id 2.4V @ 1mA
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 75 pF @ 18 V
Power Dissipation (Max) 2W (Ta) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package SOT-223-3
Package / Case TO-261-4, TO-261AA Base Product Number ZVN2106

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment ?

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

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ZVN2106G

Single N-Channel MOSFET with 60V voltage rating and 710mA current rating in SOT223 package

Inventory:

5,323
Overview of ZVN2106G Specifications Warranty & Returns Similar Products Popular Products

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After Sales Service

What after-sales service can be provided?

We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:

·Initiate the request within 90 days after the item's shipment date.

·Coordinate the return or exchange with our team.

·Keep the items in their original condition as delivered.

·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.

Shipping

What channels of transportation of goods does the website support?

We usually send out our orders during business days using FedEx, SF, UPS, or DHL. We're also here to assist with alternative shipping options. Should you require additional information about shipping particulars or expenses, please don't hesitate to get in touch with us.

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Package

How to ensure that the parts will be intact during transportation?

The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.

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