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ZVN0545GTA

SOT-223 Package with 4 pins (3 pins + tab)

Quantity Unit Price(USD) Ext. Price
1000 $0.205 $205.00
500 $0.214 $107.00
100 $0.232 $23.20
30 $0.255 $7.65
10 $0.285 $2.85
1 $0.345 $0.34

Inventory:8,141

*The price is for reference only.
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Overview of ZVN0545GTA

The ZVN0545GTA is an N-channel enhancement-mode vertical DMOS FET transistor with a high input impedance and low ON resistance. This transistor is designed for use in switching applications where high efficiency and low power consumption are required.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G1: Gate Terminal
  • D: Drain Terminal
  • S: Source Terminal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the ZVN0545GTA transistor for a visual representation.

Key Features

  • Enhancement-Mode DMOS FET: The ZVN0545GTA is an enhancement-mode FET, ensuring low power consumption and high efficiency in switching applications.
  • High Input Impedance: This transistor exhibits a high input impedance, making it suitable for circuits requiring minimal loading effects.
  • Low ON Resistance: With a low ON resistance, the ZVN0545GTA minimizes power losses and heat generation during operation.

Note: For detailed technical specifications, please refer to the ZVN0545GTA datasheet.

Application

  • Switching Circuits: Ideal for use in switching circuits where efficiency and low power consumption are critical.
  • Pulse Modulation: Suitable for pulse modulation applications due to its high input impedance and low ON resistance.
  • Signal Amplification: Can be used for signal amplification in electronic circuits requiring a high input impedance.

Functionality

The ZVN0545GTA is a high-performance enhancement-mode FET transistor that provides efficient switching capabilities with low power dissipation. It is a reliable choice for various electronic applications.

Usage Guide

  • Gate Connection: Connect the gate terminal (G1) to the control signal.
  • Drain Connection: Connect the drain terminal (D) to the load or output.
  • Source Connection: Connect the source terminal (S) to the ground or common reference point.

Frequently Asked Questions

Q: Can the ZVN0545GTA handle high-frequency signals?
A: Yes, the ZVN0545GTA is capable of operating with high-frequency signals due to its high input impedance.

Equivalent

For similar functionalities, consider these alternatives to the ZVN0545GTA:

  • IRF9540: A complementary P-channel FET with similar performance characteristics for switching applications.
  • IRF540N: An N-channel FET with enhanced switching capabilities and low ON resistance.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case SOT-223-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 450 V Id - Continuous Drain Current 140 mA
Rds On - Drain-Source Resistance 50 Ohms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2 W
Channel Mode Enhancement Series ZVN0545
Brand Diodes Incorporated Configuration Single
Fall Time 10 ns Height 1.65 mm
Length 6.7 mm Product Type MOSFET
Rise Time 7 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type FET Typical Turn-Off Delay Time 16 ns
Typical Turn-On Delay Time 7 ns Width 3.7 mm
Unit Weight 0.003951 oz

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ZVN0545GTA

SOT-223 Package with 4 pins (3 pins + tab)

Inventory:

8,141