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ZJY51R5-2P-01

EMI suppression device for two-line transmission lines up to 100 MHz

Inventory:8,648

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Overview of ZJY51R5-2P-01

The ZJY51R5-2P-01 is a high-power RF transistor designed for use in RF amplifier circuits.This transistor features a power output of 51W and operates at frequencies up to 520MHz,making it suitable for RF applications requiring high power and efficiency.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • B1:Base 1
  • B2:Base 2
  • E:Emitter
  • C:Collector
  • NC:No Connection
  • NC:No Connection


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the ZJY51R5-2P-01 transistor for a visual representation.

Key Features

  • High Power Output:The ZJY51R5-2P-01 offers a power output of 51W,ideal for high-power RF amplifier applications.
  • Wide Frequency Range:With operation up to 520MHz,this transistor is versatile for various RF frequency requirements.
  • Efficient Operation:Designed for high efficiency,the ZJY51R5-2P-01 minimizes power losses in RF amplification.
  • Reliable Performance:This transistor provides reliable performance in demanding RF circuits,ensuring stable operation.
  • Compact Package:Available in a compact package,the ZJY51R5-2P-01 is suitable for space-constrained designs.

Note:For detailed technical specifications,please refer to the ZJY51R5-2P-01 datasheet.

Application

  • RF Amplification:Ideal for use in RF amplifier circuits requiring high power and efficiency.
  • Broadcasting:Suitable for broadcasting applications where high-power RF signals are necessary.
  • Telecommunications:Used in telecommunications equipment for RF signal amplification and transmission.

Functionality

The ZJY51R5-2P-01 transistor is designed to amplify RF signals with high power output and efficiency,making it a reliable choice for RF amplification applications.

Usage Guide

  • Power Connections:Connect the collector(C),emitter(E),and base(B1,B2) pins according to the application's circuit requirements.
  • Biasing:Apply the appropriate biasing voltage and current to the base pins for proper transistor operation.
  • Heat Dissipation:Ensure proper heat sinking to manage the heat generated during high-power operation.

Equivalent

For similar functionalities,consider these alternatives to the ZJY51R5-2P-01:

  • MRF151:This is a high-power RF transistor from Motorola offering comparable power output and frequency range.
  • BLF888A:An RF power transistor from NXP Semiconductors known for its high power and efficiency in RF applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series ZJY Packaging Tube
Part Status Obsolete Filter Type Power, Signal Line
Number of Lines 2 Impedance @ Frequency 200 Ohms @ 100 MHz
Current Rating (Max) 2A DC Resistance (DCR) (Max) 120mOhm
Voltage Rating - DC 50V Operating Temperature -25°C ~ 85°C
Mounting Type Through Hole Size / Dimension 0.217" L x 0.300" W (5.50mm x 7.62mm)
Height (Max) 0.230" (5.84mm) Package / Case 4-DIP (0.300", 7.62mm)

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ZJY51R5-2P-01

EMI suppression device for two-line transmission lines up to 100 MHz

Inventory:

8,648