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VMMK-1225-TR1G

RF JFET Transistors LNA FET in Microcap DC-18GHz

Inventory:4,453

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Submit your quote request for VMMK-1225-TR1G using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of VMMK-1225-TR1G

VMMK-1225-TR1G is a high-power RF amplifier optimized for field-ready performance, customizable options, streamlined installation, and compliance tested. It provides excellent performance for wireless infrastructure applications.

Pinout

The VMMK-1225-TR1G pinout refers to the configuration and function of each pin in its SMD package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the VMMK-1225-TR1G has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • Field-Ready Performance: Optimized for wireless infrastructure applications.
  • Customizable Options: Allows for tailored solutions.
  • Streamlined Installation: Simplifies the integration process.
  • Compliance Tested: Ensures regulatory compliance.
  • High Gain Efficiency: Enhances signal amplification.
  • Signal Amplification: Boosts signal strength.
  • System Compatibility: Compatible with various systems.
  • Optimized Design: Designed for optimal performance.
  • Versatile Applications: Suitable for multiple applications.
  • Superior Reliability: Ensures high reliability.
  • Temperature Stability: Maintains stability across temperatures.
  • Cost-Effective Solution: Provides a cost-effective solution.
  • Rapid Prototyping: Facilitates rapid prototyping.
  • Precision Engineering: Ensures precise engineering.
  • Innovative Technology: Leverages innovative technology.
  • Excellent Signal Quality: Delivers excellent signal quality.
  • Enhanced Performance: Enhances overall performance.
  • Compact Design: Features a compact design.
  • Wide Frequency Range: Operates across a wide frequency range.
  • Low Power Consumption: Consumes low power.
  • High Linearity: Maintains high linearity.
  • Robust Construction: Features robust construction.
  • Easy Integration: Simplifies integration.
  • Durable Material: Utilizes durable material.

Applications

  • RF and microwave communication systems: Enables reliable communication.
  • Wireless infrastructure: Supports wireless infrastructure applications.
  • Radar systems: Enhances radar system performance.
  • Test and measurement equipment: Facilitates accurate testing.
  • Automotive radar systems: Improves automotive radar system performance.
  • Industrial sensors: Supports industrial sensor applications.
  • Satellite communication systems: Enables reliable satellite communication.
  • Other applications: Suitable for various other applications.

Advantages and Disadvantages

This section will be added in the future as more information becomes available.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF JFET Transistors RoHS Details
Transistor Type EpHEMT Technology GaAs
Operating Frequency 12 GHz Gain 11 dB
Vds - Drain-Source Breakdown Voltage 5 V Vgs - Gate-Source Breakdown Voltage - 5 V to 1 V
Id - Continuous Drain Current 50 mA Maximum Operating Temperature + 150 C
Pd - Power Dissipation 250 mW Mounting Style SMD/SMT
Brand Broadcom / Avago Forward Transconductance - Min 120 mS
NF - Noise Figure 1 dB P1dB - Compression Point 8 dBm
Product RF JFET Product Type RF JFET Transistors
Factory Pack Quantity 5000 Subcategory Transistors
Type GaAs EpHEMT

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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packageimg

VMMK-1225-TR1G

RF JFET Transistors LNA FET in Microcap DC-18GHz

Inventory:

4,453