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UF3C065030B3

High Voltage SiC FET with Low ON Resistance

Inventory:9,274

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Overview of UF3C065030B3

The UF3C065030B3 is a silicon carbide (SiC) FET transistor designed for high-power applications. It features a low ON-resistance and high-speed switching capability, making it suitable for power electronics and energy-efficient systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • N/C: No Connection
  • N/C: No Connection
  • N/C: No Connection
  • N/C: No Connection
  • N/C: No Connection
  • N/C: No Connection
  • N/C: No Connection
  • N/C: No Connection
  • N/C: No Connection
  • N/C: No Connection
  • N/C: No Connection
  • N/C: No Connection
  • N/C: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the UF3C065030B3 FET transistor for a visual representation.

Key Features

  • High Power Capability: The UF3C065030B3 is capable of handling high power levels, suitable for demanding applications.
  • Low ON-Resistance: Features low ON-resistance for efficient power conduction and minimal power dissipation.
  • High-Speed Switching: Offers high-speed switching characteristics, enabling rapid transition between on and off states.
  • Silicon Carbide Technology: Utilizes silicon carbide material for enhanced performance and reliability in high-power applications.
  • Enhanced Thermal Performance: Designed to efficiently dissipate heat during operation, improving overall reliability.

Note: For detailed technical specifications, please refer to the UF3C065030B3 datasheet.

Application

  • Power Electronics: Ideal for use in power conversion, motor drives, and other high-power electronic systems.
  • Renewable Energy Systems: Suitable for integration into solar inverters, wind turbine converters, and other renewable energy applications.
  • Electric Vehicles: Used in electric vehicle powertrains and battery management systems to achieve high efficiency and performance.

Functionality

The UF3C065030B3 is a silicon carbide FET transistor designed for high-power applications, offering low ON-resistance and high-speed switching capabilities to enable efficient power electronics and energy-efficient systems.

Usage Guide

  • Gate Drive: Provide appropriate gate drive signals to ensure proper switching behavior.
  • Drain Connection: Connect the drain terminal to the load or power supply as per the application requirements.
  • Source Connection: Connect the source terminal to the ground or return path of the circuit.

Frequently Asked Questions

Q: What are the typical applications of the UF3C065030B3?
A: The UF3C065030B3 is commonly used in power electronics, renewable energy systems, and electric vehicles to achieve high-efficiency power conversion and control.

Q: Does the UF3C065030B3 require specialized thermal management?
A: Due to its high-power capabilities, proper thermal management is recommended to ensure reliable operation and long-term performance of the UF3C065030B3.

Equivalent

For similar functionalities, consider these alternatives to the UF3C065030B3:

  • STPSC2006CW: This is a silicon carbide power Schottky diode with comparable high-power capabilities for efficient power electronics applications.
  • IXFN38N100Q2: A silicon carbide MOSFET transistor offering high-power switching and low ON-resistance characteristics similar to the UF3C065030B3.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology SiC Mounting Style SMD/SMT
Package / Case D2PAK-3 (TO-263-3) Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 65 A Rds On - Drain-Source Resistance 27 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 51 nC Minimum Operating Temperature - 25 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 242 W
Channel Mode Enhancement Qualification AEC-Q101
Tradename SiC FET Series UF3C
Brand Qorvo Configuration Single
Fall Time 15 ns Product Type MOSFET
Rise Time 16 ns Factory Pack Quantity 800
Subcategory MOSFETs Typical Turn-Off Delay Time 57 ns
Typical Turn-On Delay Time 32 ns Unit Weight 0.104600 oz

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UF3C065030B3

High Voltage SiC FET with Low ON Resistance

Inventory:

9,274