• TN2404K-T1-GE3 Package
TN2404K-T1-GE3 Package

TN2404K-T1-GE3

In Stock:8,258

TN2404K-T1-GE3 is a high-quality Single FETs, MOSFETs from VISHAY with a operating temperature range of -55 °C ~ 150 °C

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TN2404K-T1-GE3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC Package Description SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant ECCN Code EAR99
HTS Code 8541.21.00.95 Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 240 V
Drain Current-Max (Abs) (ID) 0.2 A Drain Current-Max (ID) 0.2 A
Drain-source On Resistance-Max 4 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-236AB JESD-30 Code R-PDSO-G3
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 0.36 W Power Dissipation-Max (Abs) 0.36 W
Surface Mount YES Terminal Finish MATTE TIN
Terminal Form GULL WING Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 240 V Current - Continuous Drain (Id) @ 25°C 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 4Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8 nC @ 10 V
Vgs (Max) ±20V Power Dissipation (Max) 360mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package SOT-23-3 (TO-236) Package / Case TO-236-3, SC-59, SOT-23-3
Base Product Number TN2404

Overview of TN2404K-T1-GE3

TN2404K-T1-GE3 is a Trans MOSFET optimized for high-voltage and low-drive current operations. It provides excellent performance for switching circuits.

Pinout

The TN2404K-T1-GE3 pinout refers to the configuration and function of each pin in its SOT-23 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the TN2404K-T1-GE3 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

  • N-Channel Trans MOSFET: The TN2404K-T1-GE3 is a unipolar transistor operating in enhancement mode.

Applications

  • Switching Circuits: The TN2404K-T1-GE3 can be used as a power switch for various applications such as motor control, load switching, and amplification circuits.

Advantages and Disadvantages

Advantages

  • High Voltage Capability: The TN2404K-T1-GE3 can handle high voltage levels up to 240V, making it suitable for a wide range of applications.

Disadvantages

  • Limited Drive Current: The drive current of the TN2404K-T1-GE3 is limited to 0.2A, which might restrict its use in high-power applications.

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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TN2404K-T1-GE3 Package

TN2404K-T1-GE3

High-voltage N-Channel MOSFET

Inventory:

8,258