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TN0604N3-G

N-Channel MOSFET operating in enhancement mode, suitable for 40V with 0.75 Ohm resistance

Quantity Unit Price(USD) Ext. Price
1 $0.761 $0.76
10 $0.633 $6.33
30 $0.570 $17.10
100 $0.507 $50.70
500 $0.462 $231.00
1000 $0.443 $443.00

Inventory:6,844

*The price is for reference only.
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Overview of TN0604N3-G

The TN0604N3-G is a N-channel enhancement mode power MOSFET designed for high current switching applications. It features low on-state resistance and high-speed switching capability, making it suitable for power management and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the TN0604N3-G MOSFET for a visual representation.

Key Features

  • High Current Capability: The TN0604N3-G is capable of handling high currents, making it suitable for power switching applications.
  • Low On-State Resistance: This MOSFET features a low on-state resistance, minimizing power dissipation and improving efficiency.
  • Fast Switching Speed: With its high-speed switching capability, the TN0604N3-G enables rapid switching transitions in power circuits.
  • Enhancement Mode Design: The N-channel enhancement mode design ensures easy and efficient control of the MOSFET's operation.
  • High Voltage Capability: The TN0604N3-G can withstand high voltages, expanding its applicability in various high-power circuits.

Note: For detailed technical specifications, please refer to the TN0604N3-G datasheet.

Application

  • Power Management: Ideal for use in power management circuits, such as voltage regulators and DC-DC converters.
  • Motor Control: Suitable for driving and controlling motors in applications like robotics, automation, and automotive systems.
  • Switching Power Supplies: Used in switching power supply designs for efficient power conversion and regulation.

Functionality

The TN0604N3-G MOSFET is designed for high current switching applications, offering low on-state resistance and fast switching speeds for efficient power management and motor control.

Usage Guide

  • Gate Control: Apply proper gate drive voltage and ensure correct gate-source connections for reliable switching operation.
  • Power Connections: Connect the drain terminal to the load and the source terminal to the ground or common reference point.
  • Heat Dissipation: Consider thermal management techniques to dissipate heat generated during high-current operation.

Frequently Asked Questions

Q: Can the TN0604N3-G be used in automotive applications?
A: Yes, the TN0604N3-G is suitable for automotive systems due to its high current capability and robust construction.

Equivalent

For similar functionalities, consider these alternatives to the TN0604N3-G:

  • IRF3205: A power MOSFET with similar high-current and fast-switching characteristics, suitable for power electronics applications.
  • FQP30N06L: This MOSFET offers comparable performance and is commonly used in high-power switching circuits.
  • AUIRF1404: An alternative MOSFET designed for high current and high efficiency in power management and motor control applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-92-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 40 V
Id - Continuous Drain Current 700 mA Rds On - Drain-Source Resistance 750 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 600 mV
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 740 mW Channel Mode Enhancement
Brand Microchip Technology Configuration Single
Fall Time 20 ns Forward Transconductance - Min 500 mS
Height 5.33 mm Length 5.21 mm
Product Type MOSFET Rise Time 6 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Type FET
Typical Turn-Off Delay Time 25 ns Typical Turn-On Delay Time 10 ns
Width 4.19 mm Unit Weight 0.016000 oz

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TN0604N3-G

N-Channel MOSFET operating in enhancement mode, suitable for 40V with 0.75 Ohm resistance

Inventory:

6,844