TN0604N3-G
N-Channel MOSFET operating in enhancement mode, suitable for 40V with 0.75 Ohm resistance
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.761 | $0.76 |
10 | $0.633 | $6.33 |
30 | $0.570 | $17.10 |
100 | $0.507 | $50.70 |
500 | $0.462 | $231.00 |
1000 | $0.443 | $443.00 |
Inventory:6,844
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
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Part Number : TN0604N3-G
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Package/Case : TO92-3
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Manufacturer : Microchip Technology
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Components Classification : Single FETs, MOSFETs
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Datesheet : TN0604N3-G DataSheet (PDF)
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Series : TN0604
The TN0604N3-G is a N-channel enhancement mode power MOSFET designed for high current switching applications. It features low on-state resistance and high-speed switching capability, making it suitable for power management and motor control applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the TN0604N3-G MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the TN0604N3-G datasheet. Functionality The TN0604N3-G MOSFET is designed for high current switching applications, offering low on-state resistance and fast switching speeds for efficient power management and motor control. Usage Guide Q: Can the TN0604N3-G be used in automotive applications? For similar functionalities, consider these alternatives to the TN0604N3-G:Overview of TN0604N3-G
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the TN0604N3-G is suitable for automotive systems due to its high current capability and robust construction.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | Through Hole |
Package / Case | TO-92-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 40 V |
Id - Continuous Drain Current | 700 mA | Rds On - Drain-Source Resistance | 750 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 600 mV |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 740 mW | Channel Mode | Enhancement |
Brand | Microchip Technology | Configuration | Single |
Fall Time | 20 ns | Forward Transconductance - Min | 500 mS |
Height | 5.33 mm | Length | 5.21 mm |
Product Type | MOSFET | Rise Time | 6 ns |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Type | FET |
Typical Turn-Off Delay Time | 25 ns | Typical Turn-On Delay Time | 10 ns |
Width | 4.19 mm | Unit Weight | 0.016000 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy ?
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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TN0604N3-G
N-Channel MOSFET operating in enhancement mode, suitable for 40V with 0.75 Ohm resistance
Inventory:
6,844Warranty & Returns
After Sales Service
What after-sales service can be provided?
We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:
·Initiate the request within 90 days after the item's shipment date.
·Coordinate the return or exchange with our team.
·Keep the items in their original condition as delivered.
·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.
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The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.
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