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TJ8S06M3L(T6L1,NQ)

-60V, -8A P-Ch MOSFET capable of dissipating 27W of power and with a capacitance of 890pF

Inventory:5,992

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Overview of TJ8S06M3L(T6L1,NQ)

The TJ8S06M3L(T6L1,NQ) is a high-performance MOSFET with a compact and efficient design. This MOSFET is designed for use in power management and switching applications where low on-state resistance and fast switching speeds are required, making it ideal for various electronic designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the TJ8S06M3L(T6L1,NQ) MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The TJ8S06M3L(T6L1,NQ) features low on-state resistance, minimizing power loss and heat generation during operation.
  • Fast Switching Speeds: This MOSFET offers fast switching speeds, enabling efficient power management and control in electronic circuits.
  • High Current Handling Capacity: With its high current rating, the TJ8S06M3L(T6L1,NQ) can handle substantial load currents in various applications.
  • Compact and Efficient Design: The compact and efficient design of this MOSFET makes it suitable for space-constrained electronic designs without compromising performance.

Note: For detailed technical specifications, please refer to the TJ8S06M3L(T6L1,NQ) datasheet.

Application

  • Power Management: Ideal for power management applications such as voltage regulation, DC-DC conversion, and power amplification.
  • Switching Circuits: Suitable for use in electronic switching circuits for controlling the flow of power to various components and devices.
  • Motor Control: The TJ8S06M3L(T6L1,NQ) can be used in motor control applications to regulate and control the speed and direction of motors.

Functionality

The TJ8S06M3L(T6L1,NQ) MOSFET offers efficient power switching and management capabilities, making it a versatile component in electronic circuits to control power flow and manage load currents.

Usage Guide

  • Connection: Connect the gate, drain, and source pins to the respective components and power supplies based on the circuit requirements.
  • Switching Control: Use appropriate voltage levels to the gate pin to control the switching behavior of the TJ8S06M3L(T6L1,NQ) MOSFET.

Frequently Asked Questions

Q: What is the maximum drain-source voltage for the TJ8S06M3L(T6L1,NQ) MOSFET?
A: The maximum drain-source voltage rating is specified in the datasheet and should be considered for the intended application.

Q: Can the TJ8S06M3L(T6L1,NQ) MOSFET be used in high-frequency switching applications?
A: The TJ8S06M3L(T6L1,NQ) MOSFET's datasheet contains information about its frequency response and suitability for high-frequency switching applications.

Equivalent

For similar functionalities, consider these alternatives to the TJ8S06M3L(T6L1,NQ) MOSFET:

  • IRF3205: A high-efficiency power MOSFET with low on-state resistance and fast switching capabilities.
  • FQP30N06L: This MOSFET offers similar performance characteristics to the TJ8S06M3L(T6L1,NQ) and is suitable for power management and switching applications.
  • NTD5867NL: Another alternative for high-performance power MOSFET needs, providing efficient power management and control.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case DPAK-3 (TO-252-3) Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 8 A Rds On - Drain-Source Resistance 104 mOhms
Vgs - Gate-Source Voltage - 20 V, + 10 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 19 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 27 W
Channel Mode Enhancement Qualification AEC-Q101
Tradename U-MOSVI Series TJ8S06M3L
Brand Toshiba Configuration Single
Fall Time 34 ns Height 2.3 mm
Length 6.5 mm Product Type MOSFET
Rise Time 6 ns Factory Pack Quantity 2000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 140 ns Typical Turn-On Delay Time 14 ns
Width 5.5 mm Unit Weight 0.011640 oz

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TJ8S06M3L(T6L1,NQ)

-60V, -8A P-Ch MOSFET capable of dissipating 27W of power and with a capacitance of 890pF

Inventory:

5,992
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