TJ60S06M3L(T6L1,NQ
P-Channel 60V 60A 3-Pin MOSFET, TJ60S06M3L (T6L1, NQ), in DPAK Package
Inventory:8,365
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Part Number : TJ60S06M3L(T6L1,NQ
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Package/Case : TO-252-3
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Manufacturer : Toshiba Semiconductor And Storage
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Components Classification : Single FETs, MOSFETs
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Datesheet : TJ60S06M3L(T6L1,NQ DataSheet (PDF)
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Series : TJ60S06M3L
The TJ60S06M3L(T6L1,NQ) is a power MOSFET transistor designed for high-power switching applications.This MOSFET offers low ON-resistance and high drain current capability,making it suitable for power management circuits, motor control, and other high-current applications. (Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the TJ60S06M3L(T6L1,NQ) MOSFET for a visual representation of its usage. Note: For detailed technical specifications, please refer to the TJ60S06M3L(T6L1,NQ) datasheet. Functionality The TJ60S06M3L(T6L1,NQ) MOSFET is a powerful transistor that enables efficient power switching and control in various electronic circuits. It offers reliable performance and high power-handling capability. Usage Guide Q: Can the TJ60S06M3L(T6L1,NQ) MOSFET be used in high-frequency switching applications? For similar functionalities, consider these alternatives to the TJ60S06M3L(T6L1,NQ) MOSFET:Overview of TJ60S06M3L(T6L1,NQ)
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the TJ60S06M3L(T6L1,NQ) MOSFET can be used in high-frequency switching applications due to its fast switching speed and low ON-resistance.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | DPAK-3 (TO-252-3) | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 60 A | Rds On - Drain-Source Resistance | 11.2 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 10 V | Vgs th - Gate-Source Threshold Voltage | 2 V |
Qg - Gate Charge | 156 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 100 W |
Channel Mode | Enhancement | Qualification | AEC-Q101 |
Tradename | U-MOSVI | Series | TJ60S06M3L |
Brand | Toshiba | Configuration | Single |
Fall Time | 250 ns | Height | 2.3 mm |
Length | 6.5 mm | Product Type | MOSFET |
Rise Time | 100 ns | Factory Pack Quantity | 2000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 970 ns | Typical Turn-On Delay Time | 127 ns |
Width | 5.5 mm | Unit Weight | 0.011640 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy ?
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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TJ60S06M3L(T6L1,NQ
P-Channel 60V 60A 3-Pin MOSFET, TJ60S06M3L (T6L1, NQ), in DPAK Package
Inventory:
8,365Warranty & Returns
After Sales Service
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We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:
·Initiate the request within 90 days after the item's shipment date.
·Coordinate the return or exchange with our team.
·Keep the items in their original condition as delivered.
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