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TJ60S06M3L(T6L1,NQ

P-Channel 60V 60A 3-Pin MOSFET, TJ60S06M3L (T6L1, NQ), in DPAK Package

Inventory:8,365

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Overview of TJ60S06M3L(T6L1,NQ)

The TJ60S06M3L(T6L1,NQ) is a power MOSFET transistor designed for high-power switching applications.This MOSFET offers low ON-resistance and high drain current capability,making it suitable for power management circuits, motor control, and other high-current applications.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source
  • G:Gate
  • D:Drain
  • S:Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the TJ60S06M3L(T6L1,NQ) MOSFET for a visual representation of its usage.

Key Features

  • High Power Handling: The TJ60S06M3L(T6L1,NQ) can handle high levels of power and current, suitable for power-intensive applications.
  • Low ON-Resistance: With low ON-resistance, this MOSFET minimizes power losses and heat generation during operation.
  • Fast Switching Speed: This MOSFET offers fast switching speeds, allowing for efficient control of the power flow in circuits.
  • High Reliability: Designed for reliability, the TJ60S06M3L(T6L1,NQ) ensures stable performance under various operating conditions.

Note: For detailed technical specifications, please refer to the TJ60S06M3L(T6L1,NQ) datasheet.

Application

  • Power Management: Ideal for power management circuits requiring high-current switching capabilities.
  • Motor Control: Suitable for motor control applications in robotics, automation, and industrial systems.
  • Inverter Circuits: Used in inverter circuits for converting DC power to AC power efficiently.

Functionality

The TJ60S06M3L(T6L1,NQ) MOSFET is a powerful transistor that enables efficient power switching and control in various electronic circuits. It offers reliable performance and high power-handling capability.

Usage Guide

  • Gate Control: Apply the appropriate voltage to the Gate pin to control the switching of the MOSFET.
  • Drain-Source Connection: Connect the load or circuit to be controlled between the Drain and Source pins.
  • Heat Dissipation: Ensure proper heat sinking or cooling mechanisms to dissipate heat generated during operation.

Frequently Asked Questions

Q: Can the TJ60S06M3L(T6L1,NQ) MOSFET be used in high-frequency switching applications?
A: Yes, the TJ60S06M3L(T6L1,NQ) MOSFET can be used in high-frequency switching applications due to its fast switching speed and low ON-resistance.

Equivalent

For similar functionalities, consider these alternatives to the TJ60S06M3L(T6L1,NQ) MOSFET:

  • IRF540N: A power MOSFET with comparable specifications and performance characteristics to the TJ60S06M3L(T6L1,NQ).
  • BUZ11: This MOSFET transistor offers similar power handling capabilities and is suitable for high-current applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case DPAK-3 (TO-252-3) Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 60 A Rds On - Drain-Source Resistance 11.2 mOhms
Vgs - Gate-Source Voltage - 20 V, + 10 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 156 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 100 W
Channel Mode Enhancement Qualification AEC-Q101
Tradename U-MOSVI Series TJ60S06M3L
Brand Toshiba Configuration Single
Fall Time 250 ns Height 2.3 mm
Length 6.5 mm Product Type MOSFET
Rise Time 100 ns Factory Pack Quantity 2000
Subcategory MOSFETs Transistor Type 1 P-Channel
Typical Turn-Off Delay Time 970 ns Typical Turn-On Delay Time 127 ns
Width 5.5 mm Unit Weight 0.011640 oz

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TJ60S06M3L(T6L1,NQ

P-Channel 60V 60A 3-Pin MOSFET, TJ60S06M3L (T6L1, NQ), in DPAK Package

Inventory:

8,365