TJ15S06M3L(T6L1,NQ
P-Channel Silicon MOSFET with a 60V rating
Inventory:9,031
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Part Number : TJ15S06M3L(T6L1,NQ
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Package/Case : TO-252-3
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Manufacturer : Toshiba Semiconductor And Storage
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Components Classification : Single FETs, MOSFETs
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Datesheet : TJ15S06M3L(T6L1,NQ DataSheet (PDF)
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Series : TJ15S06M3L
The TJ15S06M3L(T6L1,NQ) is a high-voltage MOSFET with a maximum drain-source voltage of 60V and a continuous drain current of 15A. It is designed for use in power management and switching applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the TJ15S06M3L(T6L1,NQ) MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the TJ15S06M3L(T6L1,NQ) datasheet. Functionality The TJ15S06M3L(T6L1,NQ) is a high-voltage MOSFET designed for power management and switching applications. It offers high current capability, low ON resistance, and fast switching speed for efficient control of power circuits. Usage Guide Q: What is the maximum drain-source voltage of the TJ15S06M3L(T6L1,NQ) MOSFET? Q: Is the TJ15S06M3L(T6L1,NQ) suitable for high-frequency applications? For similar functionalities, consider these alternatives to the TJ15S06M3L(T6L1,NQ):Overview of TJ15S06M3L(T6L1,NQ)
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The TJ15S06M3L(T6L1,NQ) has a maximum drain-source voltage rating of 60V.
A: Yes, the MOSFET features fast switching speed and low ON resistance, making it suitable for high-frequency applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | DPAK-3 (TO-252-3) | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 15 A | Rds On - Drain-Source Resistance | 63 mOhms |
Qg - Gate Charge | 36 nC | Pd - Power Dissipation | 41 W |
Qualification | AEC-Q101 | Tradename | U-MOSVI |
Series | TJ15S06M3L | Brand | Toshiba |
Configuration | Single | Height | 2.3 mm |
Length | 6.5 mm | Product Type | MOSFET |
Factory Pack Quantity | 2000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Width | 5.5 mm |
Unit Weight | 0.011640 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy ?
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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TJ15S06M3L(T6L1,NQ
P-Channel Silicon MOSFET with a 60V rating
Inventory:
9,031
Warranty & Returns
After Sales Service
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We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:
·Initiate the request within 90 days after the item's shipment date.
·Coordinate the return or exchange with our team.
·Keep the items in their original condition as delivered.
·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.
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