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TJ15S06M3L(T6L1,NQ

P-Channel Silicon MOSFET with a 60V rating

Inventory:9,031

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Overview of TJ15S06M3L(T6L1,NQ)

The TJ15S06M3L(T6L1,NQ) is a high-voltage MOSFET with a maximum drain-source voltage of 60V and a continuous drain current of 15A. It is designed for use in power management and switching applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal for MOSFET control
  • D: Drain terminal for the MOSFET
  • S: Source terminal for the MOSFET
  • N/C: No connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the TJ15S06M3L(T6L1,NQ) MOSFET for a visual representation.

Key Features

  • High Voltage Rating: With a maximum drain-source voltage of 60V, the TJ15S06M3L(T6L1,NQ) is suitable for high voltage applications.
  • High Current Capability: The 15A continuous drain current allows for efficient power switching in various circuits.
  • Low ON Resistance: The MOSFET features low on-state resistance, minimizing power losses and improving efficiency.
  • Fast Switching Speed: It offers fast switching characteristics, making it suitable for high-frequency applications.
  • Enhancement Mode: This MOSFET operates in enhancement mode, providing easy and precise control over the switching operation.

Note: For detailed technical specifications, please refer to the TJ15S06M3L(T6L1,NQ) datasheet.

Application

  • Power Management: Ideal for use in power supplies, voltage regulators, and DC-DC converters.
  • Switching Circuits: Suitable for switching applications in various electronic systems.
  • Motor Control: Can be used in motor control circuits for efficient power switching.

Functionality

The TJ15S06M3L(T6L1,NQ) is a high-voltage MOSFET designed for power management and switching applications. It offers high current capability, low ON resistance, and fast switching speed for efficient control of power circuits.

Usage Guide

  • Gate Control: Apply the control signal to the G (Gate) terminal to control the switching operation of the MOSFET.
  • Load Connection: Connect the load between the D (Drain) and S (Source) terminals to control the power flow.

Frequently Asked Questions

Q: What is the maximum drain-source voltage of the TJ15S06M3L(T6L1,NQ) MOSFET?
A: The TJ15S06M3L(T6L1,NQ) has a maximum drain-source voltage rating of 60V.

Q: Is the TJ15S06M3L(T6L1,NQ) suitable for high-frequency applications?
A: Yes, the MOSFET features fast switching speed and low ON resistance, making it suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the TJ15S06M3L(T6L1,NQ):

  • IRF3205: This is a high-voltage MOSFET with similar characteristics, suitable for power management and switching applications.
  • FQP30N06L: A MOSFET offering comparable voltage and current ratings, suitable for power control applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case DPAK-3 (TO-252-3) Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 15 A Rds On - Drain-Source Resistance 63 mOhms
Qg - Gate Charge 36 nC Pd - Power Dissipation 41 W
Qualification AEC-Q101 Tradename U-MOSVI
Series TJ15S06M3L Brand Toshiba
Configuration Single Height 2.3 mm
Length 6.5 mm Product Type MOSFET
Factory Pack Quantity 2000 Subcategory MOSFETs
Transistor Type 1 P-Channel Width 5.5 mm
Unit Weight 0.011640 oz

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TJ15S06M3L(T6L1,NQ

P-Channel Silicon MOSFET with a 60V rating

Inventory:

9,031