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TIP100G

NPN Silicon Power Bipolar Transistor rated at 8A Collector Current and 60V Collector-Emitter Breakdown Voltage, housed in TO-220AB Package

Quantity Unit Price(USD) Ext. Price
1000 $0.159 $159.00
500 $0.162 $81.00
200 $0.168 $33.60
1 $0.435 $0.44

Inventory:8,640

*The price is for reference only.
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Submit your quote request for TIP100G using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of TIP100G

The TIP100G is a high power NPN Bipolar Junction Transistor (BJT) designed for various power switching applications. It is capable of handling high current and voltage levels, making it suitable for power amplification and control.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Connects to the positive power supply
  • Base (B): Controls the transistor switching action
  • Emitter (E): Connects to the load or ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the TIP100G BJT for a visual representation.

Key Features

  • High Power Handling Capability: The TIP100G can handle high power levels, making it suitable for power applications.
  • High Current Gain: This BJT has a high current gain, allowing for efficient amplification of signals.
  • Fast Switching Speed: The TIP100G offers fast switching speeds, enabling quick response in switching applications.
  • Low Saturation Voltage: With low saturation voltage, this transistor minimizes power loss during operation.
  • Robust Construction: Designed for reliability and robust performance in demanding environments.

Note: For detailed technical specifications, please refer to the TIP100G datasheet.

Application

  • Power Amplification: Ideal for power amplification in audio amplifiers, motor control circuits, and high-power LED drivers.
  • Switching Circuits: Used in power switching circuits, such as relay drivers and motor control switches.
  • Voltage Regulation: Suitable for voltage regulation applications where high current and power handling are required.

Functionality

The TIP100G is a high power NPN transistor that can amplify signals and switch high power loads with high efficiency and reliability.

Usage Guide

  • Connection: Connect the collector (C) to the positive supply, the base (B) to the control signal or input, and the emitter (E) to the load or ground.
  • Biasing: Provide appropriate base current and voltage to ensure proper transistor operation.
  • Heat Sink: To dissipate heat generated during high-power operation, use a suitable heat sink.

Frequently Asked Questions

Q: Is the TIP100G suitable for high-frequency applications?
A: The TIP100G is primarily designed for power applications and may not be optimal for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the TIP100G:

  • TIP120G: A higher power version of the TIP100G with increased power handling capabilities.
  • TIP102G: This BJT offers similar power handling characteristics to the TIP100G but with different package options.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Last Shipments Compliance PbAHP
Package Type TO-220-3 Case Outline 221A
MSL Type NA MSL Temp (°C) 0
Container Type TUBE Container Qty. 50
ON Target N Polarity NPN
IC Continuous (A) 8 V(BR)CEO Min (V) 60
VCE(sat) Max (V) 2 hFE Min (k) 1
hFE Max (k) 20 fT Min (MHz) 4
Pricing ($/Unit) Price N/A

Warranty & Returns

Warranty, Returns, and Additional Information

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TIP100G

NPN Silicon Power Bipolar Transistor rated at 8A Collector Current and 60V Collector-Emitter Breakdown Voltage, housed in TO-220AB Package

Inventory:

8,640