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TGI8596-50

Bipolar Transistors - Pre-Biased TRANSISTOR GAN HEMT INTERNALLY MATCHED, 8.5 - 9.6 GHz, 50W

Inventory:4,141

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Overview of TGI8596-50

The TGI8596-50 is a high-power GaN RF amplifier transistor designed for use in various RF and microwave applications. It offers high efficiency and power gain, making it suitable for demanding communication systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VDD: Positive supply voltage
  • GND: Ground connection
  • RF IN: RF input
  • RF OUT: RF output
  • Gate: Gate control
  • VD: Drain voltage
  • Source: Source connection
  • VGG: Gate voltage

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the TGI8596-50 RF amplifier transistor for a visual representation.

Key Features

  • High-Power GaN Transistor: Designed for high-power RF amplification with GaN technology.
  • High Efficiency: Offers high efficiency and power gain, optimizing performance in RF systems.
  • Wideband Operation: Suitable for wideband RF and microwave applications.
  • Robust Design: Ensures reliability and performance in demanding environments.
  • Compact Size: Available in a compact package for space-constrained applications.

Note: For detailed technical specifications, please refer to the TGI8596-50 datasheet.

Application

  • Wireless Communication Systems: Ideal for use in high-power RF amplification in wireless communication systems.
  • Radar Systems: Suitable for radar systems requiring high-power amplification in the RF and microwave frequency ranges.
  • Satellite Communication: Used in satellite communication systems for efficient RF amplification.

Functionality

The TGI8596-50 is a high-power GaN RF amplifier transistor designed to amplify RF signals with high efficiency and reliability, catering to various RF and microwave applications.

Usage Guide

  • Power Supply: Connect VDD (Positive supply voltage) and GND (Ground connection) appropriately.
  • RF Connections: Connect RF IN (RF input) and RF OUT (RF output) to the respective RF signal paths.
  • Control Interface: Use Gate (Gate control) and VGG (Gate voltage) pins for gate control and biasing.

Frequently Asked Questions

Q: What is the typical operating frequency range of the TGI8596-50?
A: The TGI8596-50 operates typically in the RF and microwave frequency ranges, depending on the application.

Q: Is the TGI8596-50 suitable for broadband applications?
A: Yes, the TGI8596-50 is suitable for wideband RF and microwave applications due to its design and performance characteristics.

Equivalent

For similar functionalities, consider these alternatives to the TGI8596-50:

  • MGFC47H3952: A high-power GaN RF transistor offering similar performance characteristics.
  • MAAP-011232: This is another high-efficiency GaN RF amplifier transistor suitable for demanding RF applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - Pre-Biased Series TGI8596
Brand Toshiba Product Type BJTs - Bipolar Transistors - Pre-Biased
Subcategory Transistors

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TGI8596-50

Bipolar Transistors - Pre-Biased TRANSISTOR GAN HEMT INTERNALLY MATCHED, 8.5 - 9.6 GHz, 50W

Inventory:

4,141