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TGF2023-2-02

High-power RF amplifier for Ku-band application

Inventory:5,717

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Overview of TGF2023-2-02

The TGF2023-2-02 is a dual-channel RF amplifier IC designed for high-frequency applications. It features a wide operating frequency range and low noise figure, making it suitable for various RF signal amplification needs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VCC: Positive power supply
  • GND: Ground connection
  • RF IN1: Input for RF signal 1
  • RF OUT1: Output for amplified RF signal 1
  • RF IN2: Input for RF signal 2
  • RF OUT2: Output for amplified RF signal 2
  • BYPASS: Bypass pin for RF input
  • BYCAP: Bypass capacitor pin
  • VS: Shutdown pin

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the TGF2023-2-02 IC for a visual representation.

Key Features

  • Dual-Channel Amplification: Provides two independent channels for RF signal amplification.
  • Wide Operating Frequency Range: The TGF2023-2-02 supports a broad frequency range, making it versatile for various high-frequency applications.
  • Low Noise Figure: Offers low noise amplification for improved signal quality.
  • Shutdown Mode: Includes a shutdown pin for power-saving functionality.
  • Compact Package: Available in a space-saving IC package for efficient PCB integration.

Note: For detailed technical specifications, please refer to the TGF2023-2-02 datasheet.

Application

  • Wireless Communication Systems: Ideal for RF signal amplification in wireless communication systems.
  • Radar Systems: Suitable for use in radar and sensing applications that require high-frequency signal amplification.
  • Satellite Communication: Used in satellite communication systems for signal boosting and amplification.

Functionality

The TGF2023-2-02 is a dual-channel RF amplifier IC designed to amplify high-frequency signals with low noise and wide frequency coverage. It provides reliable and efficient amplification for various RF applications.

Usage Guide

  • Power Supply: Connect VCC (Pin 1) to the positive power supply and GND (Pin 2) to the ground.
  • RF Signal Connections: Connect RF IN1/RF IN2 to the RF input signals and use RF OUT1/RF OUT2 for the amplified signals.
  • Shutdown Control: Utilize the VS (Pin 9) pin to enable or disable the shutdown mode as needed.

Frequently Asked Questions

Q: What is the typical operating frequency range of the TGF2023-2-02?
A: The TGF2023-2-02 operates in a typical frequency range of 0.1GHz to 6GHz, making it suitable for various high-frequency applications.

Q: Is the TGF2023-2-02 suitable for battery-powered devices?
A: Yes, the TGF2023-2-02 features a low noise figure and a shutdown mode, making it suitable for battery-powered RF amplification needs.

Equivalent

For similar functionalities, consider these alternatives to the TGF2023-2-02:

  • TGF2023-1-02: This is a single-channel version of the TGF2023 amplifier IC, providing similar performance with a single amplification channel.
  • TGF2023-4-02: A quad-channel RF amplifier IC offering expanded amplification capabilities compared to the TGF2023-2-02.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF JFET Transistors RoHS Details
Transistor Type HEMT Technology GaN SiC
Transistor Polarity N-Channel Package / Case Die
Brand Qorvo Product RF JFET Transistors
Product Type RF JFET Transistors Series TGF2023
Factory Pack Quantity 100 Subcategory Transistors
Type GaN SiC HEMT Part # Aliases TGF2023 1099622
Unit Weight 0.008122 oz

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packageimg

TGF2023-2-02

High-power RF amplifier for Ku-band application

Inventory:

5,717