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TGA2216-SM

RF Amplifier .3-3GHz 10W Gain 21dB GaN

Inventory:7,174

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Quick Inquiry

Please submit RFQ for TGA2216-SM or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of TGA2216-SM

Key Features and Performance • 34.5 dBm Midband Pout • 24 dB Nominal Gain • 10 dB Typical Input Return Loss • 5 dB Typical Output Return Loss • Bias Conditions: 8V @ 1.2A • 0.25 µm Ku pHEMT 2MI • Chip dimensions: 4.3 x 2.9 x 0.1 mm (170 x 115 x 4 mils)Primary Applications • X-Ku Point-to-Point • ECCM

Key Features

  • The features of TGA2216-SM include:
  • - Frequency Range: 0
  • 1–3
  • 0 GHz
  • - PSAT: >40 dBm at PIN = 27 dBm
  • - P1dB: >35 dBm
  • - PAE: 50% @ midband
  • - Large Signal Gain: >13 dB
  • - Small Signal Gain: 21 dB
  • - Bias: VD = 40 V
  • IDQ = 360 mA
  • VG1 = -2
  • 4 V Typical
  • VG2 = +17
  • 7 V Typical
  • - Wideband Flat Gain and Power
  • - Package Dimensions: 5
  • 0 x 5
  • 0 x 1
  • 45 mm

Application

  • The applications of TGA2216-SM include commercial and military radar
  • communications
  • and electronic warfare

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category RF Amplifier RoHS Details
Mounting Style SMD/SMT Package / Case QFN-32
Type Power Amplifiers Technology GaN SiC
Operating Frequency 100 MHz to 3 GHz P1dB - Compression Point 35 dBm
Gain 21 dB Operating Supply Voltage 40 V
Operating Supply Current 360 mA Brand Qorvo
Input Return Loss 8 dB Moisture Sensitive Yes
Number of Channels 1 Channel Pd - Power Dissipation 28 W
Product GaN Product Type RF Amplifier
Factory Pack Quantity 50 Subcategory Wireless & RF Integrated Circuits
Supply Voltage - Max 48 V Part # Aliases 1115736
Unit Weight 0.006653 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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