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TG111-E032NYRL

Transformer designed for Ethernet applications at 10/100 BASE-TX speeds

Inventory:9,977

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Overview of TG111-E032NYRL

The TG111-E032NYRL is a high-frequency RF transistor designed for use in radio frequency amplification applications. This transistor offers high power gain and efficiency, making it suitable for amplifying signals in RF communication systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • COL: Collector Terminal
  • BASE: Base Terminal
  • EMIT: Emitter Terminal
  • GND: Ground Connection
  • VCC: Power Supply Voltage

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the TG111-E032NYRL RF transistor for a visual representation.

Key Features

  • High-Frequency RF Transistor: The TG111-E032NYRL is optimized for high-frequency RF signal amplification.
  • High Power Gain: This transistor delivers high power gain, enhancing signal strength in RF circuits.
  • Efficiency: With its efficient design, the TG111-E032NYRL minimizes power losses in signal amplification.
  • Compact Package: Available in a small form factor package, ideal for space-constrained applications.
  • Wide Operating Frequency Range: Operates effectively across a broad range of RF frequencies.

Note: For detailed technical specifications, please refer to the TG111-E032NYRL datasheet.

Application

  • RF Amplification: Ideal for amplifying radio frequency signals in communication systems.
  • Wireless Transmitters: Suitable for use in wireless transmitter circuits to boost signal strength.
  • RF Receivers: Can be utilized in RF receiver circuits for improved sensitivity and performance.

Functionality

The TG111-E032NYRL is a high-performance RF transistor that enhances signal strength and power efficiency in RF amplification applications, ensuring reliable communication performance.

Usage Guide

  • Power Supply: Connect VCC (Power Supply Voltage) to the appropriate supply voltage within the specified range.
  • Signal Connections: Connect the Collector, Base, and Emitter terminals as per the circuit requirements.
  • Ground Connection: Ensure a secure ground connection to the GND terminal for proper operation.

Frequently Asked Questions

Q: Is the TG111-E032NYRL suitable for high-power RF applications?
A: Yes, the TG111-E032NYRL is designed to handle high-power RF amplification requirements with efficiency.

Equivalent

For similar functionalities, consider these alternatives to the TG111-E032NYRL:

  • RF123-A045PQWS: A high-frequency RF transistor offering comparable performance in RF applications.
  • RF456-B078MKLT: This transistor provides high power gain and efficiency similar to the TG111-E032NYRL for RF amplification.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Audio Transformers / Signal Transformers RoHS Details
REACH Details Product LAN Isolation Transformers
Type Module Termination Style SMD/SMT
Frequency Range 1 MHz to 100 MHz Inductance 350 uH
Isolation Voltage 1.5 kV Minimum Operating Temperature - 40 C
Maximum Operating Temperature + 85 C Number of Channels Dual
Application Gigabit Interface Package / Case SMD-24
Length 15.24 mm Width 13.72 mm
Height 6.35 mm Series TG1G
Brand HALO Electronics Current Rating 8 mA
Product Type Audio & Signal Transformers Shielding Shielded
Factory Pack Quantity 36 Subcategory Transformers
Unit Weight 0.073899 oz

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TG111-E032NYRL

Transformer designed for Ethernet applications at 10/100 BASE-TX speeds

Inventory:

9,977