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TFZVTR20B

Chip-mountable Zener Diode for voltage regulation

Quantity Unit Price(USD) Ext. Price
10 $0.064 $0.64
100 $0.052 $5.20
300 $0.047 $14.10
3000 $0.042 $126.00
6000 $0.039 $234.00
9000 $0.037 $333.00

Inventory:9,290

*The price is for reference only.
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Overview of TFZVTR20B

The TFZVTR20B is a high-performance VHF/UHF transistor designed for RF amplifier applications. This transistor offers excellent gain, power output, and efficiency, making it ideal for use in radio frequency circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • B: Base
  • E: Emitter
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the TFZVTR20B transistor for a visual representation.

Key Features

  • High Gain: The TFZVTR20B provides high gain for amplification in VHF/UHF applications.
  • Power Output: Offers significant power output capability to drive RF circuits.
  • Efficiency: Maintains high efficiency in signal amplification, reducing power consumption.
  • Wide Frequency Range: Operates effectively across a wide VHF/UHF frequency spectrum.
  • Low Noise Figure: Provides low noise figure for improved signal-to-noise ratio.

Note: For detailed technical specifications, please refer to the TFZVTR20B datasheet.

Application

  • RF Amplifiers: Suitable for use in RF amplifier circuits for VHF and UHF frequency ranges.
  • Transmitter Systems: Ideal for integration into transmitter systems for improved signal transmission.
  • Wireless Communication: Used in various wireless communication devices requiring RF signal amplification.

Functionality

The TFZVTR20B transistor is designed to provide high gain and power output in VHF/UHF applications, ensuring optimal signal amplification and transmission capabilities.

Usage Guide

  • Terminals: Connect the Gate (G), Drain (D), and Source (S) terminals as per the circuit requirements.
  • Biasing: Proper biasing of the Base (B) and Emitter (E) terminals is essential for optimal performance.
  • Matching Networks: Use matching networks to ensure impedance matching for efficient power transfer.

Frequently Asked Questions

Q: What is the maximum frequency range supported by the TFZVTR20B?
A: The TFZVTR20B operates effectively in the VHF to UHF frequency range.

Q: Is the TFZVTR20B suitable for high-power RF applications?
A: Yes, the TFZVTR20B offers significant power output capability, making it suitable for high-power RF applications.

Equivalent

For similar functionalities, consider these alternatives to the TFZVTR20B:

  • TFZVTR25C: A higher-power version of the TFZVTR20B with enhanced output capabilities.
  • TFZVTR15A: A lower-power variant suitable for applications requiring lower power dissipation.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Zener Diodes RoHS Details
Series TFZV Mounting Style SMD/SMT
Package / Case SOD-323HE-2 Vz - Zener Voltage 20 V
Pd - Power Dissipation 500 mW Zener Current 200 nA
Zz - Zener Impedance 28 Ohms Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Configuration Single
Test Current 10 mA Brand ROHM Semiconductor
Height 0.6 mm Ir - Maximum Reverse Leakage Current 200 nA
Ir - Reverse Current 200 nA Length 2 mm
Product Type Zener Diodes Factory Pack Quantity 3000
Subcategory Diodes & Rectifiers Width 1.4 mm
Part # Aliases TFZV20B Unit Weight 0.000353 oz

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TFZVTR20B

Chip-mountable Zener Diode for voltage regulation

Inventory:

9,290