TES 2N-2413

Overview of TES 2N-2413

The TES 2N-2413 is a high-power NPN transistor optimized for high-speed and low-voltage operations. It provides excellent performance for analog and digital signal switching in various electronic devices.

Pinout

The TES 2N-2413 pinout refers to the configuration and function of each pin in its TO-92 package. This package typically includes a diagram showing the layout of the pins when viewed from the top down with pins named sequentially. Each pin on the TES 2N-2413 has a specific role such as power supply input, ground connection, or signal interface. The pinout details are crucial for integrating this component into a circuit as they ensure correct connections for optimal device performance. Designers and engineers must refer to the datasheet provided by the manufacturer to get accurate information regarding each pin's function and electrical characteristics.

Features

• High-power NPN transistor: The TES 2N-2413 is designed for high-power applications, making it suitable for demanding electronic devices.
• Maximum collector-emitter voltage of 100 volts: This feature ensures the transistor can handle high-voltage signals without compromising its performance.
• Maximum collector current of 1.5 amperes: The TES 2N-2413 is capable of handling significant currents, making it suitable for applications that require high power switching.
• Power dissipation of 1.2 watts: This feature ensures the transistor can handle heat generated during operation without overheating or compromising its performance.
• TO-92 package: The TES 2N-2413 comes in a compact TO-92 package, making it easy to mount and integrate into electronic devices.

Applications

• Industrial automation: The TES 2N-2413 is commonly used in industrial automation applications that require high-power switching and amplification of signals.
• Instrumentation: This transistor is suitable for instrumentation applications that require precise signal processing and amplification.
• Telecommunications: The TES 2N-2413 can be used in telecommunications applications that require high-power switching and amplification of signals.
• Power supply applications: This transistor is suitable for power supply applications that require high-power switching and amplification of signals.

Advantages and Disadvantages

Advantages

• High-power performance: The TES 2N-2413 is designed for high-power applications, making it suitable for demanding electronic devices.
• Low-voltage operation: This transistor can operate at low voltages, making it suitable for battery-powered or low-voltage applications.
• Compact package: The TES 2N-2413 comes in a compact TO-92 package, making it easy to mount and integrate into electronic devices.
• High-speed switching: This transistor is capable of high-speed switching, making it suitable for applications that require fast signal processing.

Disadvantages

• Heat generation: The TES 2N-2413 can generate heat during operation, which may affect its performance or lifespan if not properly cooled.
• Sensitivity to voltage and current: This transistor is sensitive to voltage and current fluctuations, which may affect its performance or lifespan if not properly controlled.

Equivalents

The TES 2N-2413 has equivalents in other manufacturers' products. Some examples include:

• Fairchild Semiconductor's FET101
• International Rectifier's IRF510
• Motorola's MRF210

Frequently Asked Questions

Q: What is the maximum collector-emitter voltage of the TES 2N-2413?
A: The maximum collector-emitter voltage of the TES 2N-2413 is 100 volts.

Q: What is the maximum collector current of the TES 2N-2413?
A: The maximum collector current of the TES 2N-2413 is 1.5 amperes.

Q: What is the power dissipation of the TES 2N-2413?
A: The power dissipation of the TES 2N-2413 is 1.2 watts.

Q: What is the package type of the TES 2N-2413?
A: The package type of the TES 2N-2413 is TO-92.