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TC58NVG0S3HBAI4

28MX8 flash memory, TFBGA-63, PBGA63, plastic ball grid array 63, thin fine pitch ball grid array 63

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Overview of TC58NVG0S3HBAI4

The TC58NVG0S3HBAI4 is a NAND Flash memory IC designed for non-volatile storage applications. It features a high-speed interface and a large storage capacity, making it suitable for use in various electronic devices and embedded systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • ALE: Address Latch Enable
  • CLE: Command Latch Enable
  • CE: Chip Enable
  • WE: Write Enable
  • RE: Read Enable
  • R/B: Ready/Busy Status
  • I/O[0-7]: Input/Output Data Pins
  • VCC: Power Supply
  • GND: Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the TC58NVG0S3HBAI4 NAND Flash memory IC for a visual representation.

Key Features

  • High-Speed Interface: The TC58NVG0S3HBAI4 offers a high-speed interface for efficient data transfer.
  • Larger Storage Capacity: With a large storage capacity, this NAND Flash memory IC is suitable for storing a wide range of data and programs.
  • Low Power Consumption: Features low power consumption for energy-efficient operation in portable and battery-powered devices.
  • Reliable Data Retention: Ensures reliable data retention for long-term storage of critical information.
  • Compact Package: Available in a compact and space-saving package for integration into small form factor devices.

Note: For detailed technical specifications, please refer to the TC58NVG0S3HBAI4 datasheet.

Application

  • Embedded Systems: Ideal for use in embedded systems for program and data storage.
  • Solid-State Drives: Suitable for use in solid-state drives and storage devices for high-speed data access.
  • Consumer Electronics: Used in various consumer electronics such as digital cameras, smartphones, and tablets for data storage.

Functionality

The TC58NVG0S3HBAI4 NAND Flash memory IC provides reliable non-volatile storage with high-speed data transfer capabilities. It is designed to meet the demanding storage requirements of modern electronic devices.

Usage Guide

  • Power Supply: Connect VCC (Pin 8) to the power supply voltage and GND (Pin 9) to ground.
  • Interface Connections: Connect the address, command, enable, write enable, and read enable pins to the respective control signals in the system.
  • Data I/O: Connect the input/output data pins (I/O[0-7]) to the data bus of the host system.

Frequently Asked Questions

Q: Can the TC58NVG0S3HBAI4 be used in battery-powered devices?
A: Yes, the TC58NVG0S3HBAI4 features low power consumption, making it suitable for battery-powered devices requiring non-volatile storage.

Equivalent

For similar functionalities, consider these alternatives to the TC58NVG0S3HBAI4:

  • MT29F2G08ABAEAWP:A NAND Flash memory IC from Micron offering similar high-speed interface and storage capacity.
  • S34ML02G100TFI000:A NAND Flash memory IC from Cypress Semiconductor with comparable performance and reliability.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category NAND Flash RoHS Details
Mounting Style SMD/SMT Package / Case TFBGA-63
Memory Size 1 Gbit Interface Type Parallel
Organization 128 M x 8 Data Bus Width 8 bit
Supply Voltage - Min 2.7 V Supply Voltage - Max 3.6 V
Minimum Operating Temperature - 40 C Maximum Operating Temperature + 85 C
Brand Kioxia America Memory Type NAND
Moisture Sensitive Yes Product Type NAND Flash
Factory Pack Quantity 210 Subcategory Memory & Data Storage
Unit Weight 0.005291 oz

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