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T588N16TOF

1 Element, 588000mA I(T)

Inventory:2,532

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Overview of T588N16TOF

The T588N16TOF is a high power insulated gate bipolar transistor (IGBT) module designed for industrial and power electronics applications. It features a high voltage and current rating, making it suitable for high-power switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector
  • Emitter
  • GATE
  • Collector
  • Emitter
  • GATE
  • Collector
  • Emitter
  • GATE

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the T588N16TOF IGBT module for a visual representation.

Key Features

  • High Voltage and Current Rating: The T588N16TOF offers a high voltage and current capacity, suitable for demanding industrial applications.
  • Low Saturation Voltage: This IGBT module features low saturation voltage, reducing power dissipation and improving efficiency.
  • Integrated Gate Resistor: Comes with an integrated gate resistor for simplified gate drive circuitry.
  • Overcurrent Protection: Includes overcurrent protection features to safeguard the module and connected components.
  • High Thermal Conductivity Package: Housed in a package with high thermal conductivity to enhance heat dissipation.

Note: For detailed technical specifications, please refer to the T588N16TOF datasheet.

Application

  • Motor Drives: Ideal for motor drives in industrial machinery and automation systems.
  • Power Supplies: Suitable for use in high-power switching power supply units.
  • Renewable Energy: Used in inverters for renewable energy systems like solar and wind power.

Functionality

The T588N16TOF IGBT module is designed for high-power switching applications, providing efficient and reliable performance in various industrial and power electronics systems.

Usage Guide

  • Gate Drive: Provide appropriate gate drive voltage and current for optimal switching performance.
  • Protection Circuits: Implement overcurrent protection and thermal management for long-term reliability.

Frequently Asked Questions

Q: Is the T588N16TOF suitable for high-frequency switching applications?
A: Yes, the T588N16TOF can be used in high-frequency switching applications with appropriate considerations for thermal management.

Equivalent

For similar functionalities, consider these alternatives to the T588N16TOF:

  • IGBT Module XYZ123: A comparable IGBT module with similar voltage and current ratings.
  • IGBT Module ABC456: Another option for high-power switching applications with reliable performance.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Discrete Semiconductor Modules RoHS Details
Type Power Semiconductor Technology Si
Vr - Reverse Voltage 1.6 kV Mounting Style Through Hole
Package / Case T588 Brand Infineon Technologies
Output Current 1.25 kA Product Type Discrete Semiconductor Modules
Factory Pack Quantity 1 Subcategory Discrete Semiconductor Modules

Warranty & Returns

Warranty, Returns, and Additional Information

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    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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T588N16TOF

1 Element, 588000mA I(T)

Inventory:

2,532