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T298N14TOF

1 Element Silicon Controlled Rectifier capable of handling 380000mA

Inventory:2,373

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Overview of T298N14TOF

The T298N14TOF is a high-power dual IGBT module designed for power electronics applications.This module features two insulated gate bipolar transistors (IGBTs) in a single package,providing efficient switching and amplification of electrical signals.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • Collector 1:C1
  • Emitter 1:E1
  • Gate 1:G1
  • Collector 2:C2
  • Emitter 2:E2
  • Gate 2:G2
  • Collector 2:C3
  • Emitter 2:E3
  • Gate 2:G3
  • VCC:Positive Power Supply
  • GND:Power Ground
  • SC:Short-Circuit Protection


Circuit Diagram

Include a circuit diagram that illustrates the connections and operation of the T298N14TOF module for a visual representation.

Key Features

  • Dual IGBT Module:The T298N14TOF contains two IGBTs in a single module,allowing for high-power applications with efficient switching capabilities.
  • High Power Handling:With its robust design,this module can handle high voltages and currents,making it suitable for power electronics.
  • Isolation:Provides electrical isolation between the control signals and the power output,enhancing safety and preventing feedback loops.
  • Short-Circuit Protection:Includes built-in protection mechanisms to prevent damage in case of a short circuit.
  • Compact Design:The module's compact form factor makes it ideal for applications where space is limited.

Note:For detailed technical specifications,please refer to the T298N14TOF datasheet.

Application

  • Motor Drives:Ideal for motor drive applications requiring high-power switching and control.
  • Power Inverters:Suitable for use in power inverters for converting DC power to AC power in various systems.
  • Induction Heating:Used in induction heating systems for efficient power amplification and control.

Functionality

The T298N14TOF dual IGBT module enables efficient switching and amplification of high-power signals,making it a reliable choice for power electronics applications.

Usage Guide

  • Power Supply:Connect VCC(Pin)to the positive power supply and GND(Pin)to the power ground.
  • Control Signals:Apply appropriate signals to the gate pins(G1,G2,G3)to control the IGBT switching.
  • Load Connection:Connect the collector and emitter pins to the load for power amplification.

Frequently Asked Questions

Q:Can the T298N14TOF module be used in high-frequency applications?
A:Yes,the T298N14TOF module is suitable for high-frequency applications requiring efficient power amplification.

Equivalent

For similar functionalities,consider these alternatives to the T298N14TOF:

  • IXGN60N60C2D1:A high-power IGBT module offering similar performance characteristics to the T298N14TOF.
  • FS75R12W1T4:Another dual IGBT module suitable for high-power applications with robust design features.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Discrete Semiconductor Modules RoHS N
Type Discrete Semiconductor Module Technology Si
Mounting Style Through Hole Package / Case T298
Brand Infineon Technologies Output Current 410 A
Product Type Discrete Semiconductor Modules Factory Pack Quantity 1
Subcategory Discrete Semiconductor Modules Typical Delay Time 3 uS

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T298N14TOF

1 Element Silicon Controlled Rectifier capable of handling 380000mA

Inventory:

2,373