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SUM110N06-3M4L-E3

N-channel silicon transistor designed for general-purpose power applications, compliant with RoHS regulations

Inventory:5,494

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Overview of SUM110N06-3M4L-E3

The SUM110N06-3M4L-E3 is an N-channel power MOSFET designed for high-power switching applications. This MOSFET features a low on-resistance, high current capability, and enhanced thermal performance, making it suitable for various power management and conversion systems.

Pinout

(Note: The pin configuration below is a general representation. Please refer to the specific datasheet for detailed information.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SUM110N06-3M4L-E3 MOSFET for a visual representation.

Key Features

  • Low On-Resistance: The SUM110N06-3M4L-E3 offers a low on-resistance for efficient power management.
  • High Current Capability: This MOSFET can handle high currents, making it suitable for power switching applications.
  • Enhanced Thermal Performance: The MOSFET is designed to provide improved thermal dissipation for reliable operation under high loads.
  • Fast Switching Speed: With fast switching characteristics, the SUM110N06-3M4L-E3 ensures quick response times in switching applications.
  • Robust Construction: The MOSFET is built to withstand high voltages and current stresses, ensuring long-term reliability.

Note: For detailed technical specifications, please refer to the SUM110N06-3M4L-E3 datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems, such as DC-DC converters and motor control applications.
  • Switching Circuits: Suitable for high-power switching circuits in industrial and automotive electronics.
  • Voltage Regulation: Used in voltage regulation circuits to control and adjust power delivery in various electronic devices.

Functionality

The SUM110N06-3M4L-E3 power MOSFET is designed to efficiently switch high currents with low on-resistance, providing effective power control and management in diverse electronic systems.

Usage Guide

  • Gate Connection: Connect the gate pin (G) to the driving circuit to control the switching operation.
  • Drain and Source Connections: Connect the drain (D) and source (S) pins appropriately in the circuit for power switching.
  • Thermal Considerations: Ensure proper thermal management to maintain the MOSFET within safe operating temperatures.

Frequently Asked Questions

Q: Is the SUM110N06-3M4L-E3 suitable for high-frequency switching applications?
A: Yes, the SUM110N06-3M4L-E3 features fast switching speeds, making it compatible with high-frequency switching circuits.

Equivalent

For similar functionalities, consider these alternatives to the SUM110N06-3M4L-E3:

  • IRF3205: A comparable N-channel power MOSFET with similar performance characteristics.
  • FDP8878: This MOSFET offers high current handling capabilities and low on-resistance for power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TO-263-3 Tradename TrenchFET
Series SUM Brand Vishay / Siliconix
Height 4.83 mm Length 10.67 mm
Product Type MOSFET Factory Pack Quantity 800
Subcategory MOSFETs Width 9.65 mm
Unit Weight 0.139332 oz

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SUM110N06-3M4L-E3

N-channel silicon transistor designed for general-purpose power applications, compliant with RoHS regulations

Inventory:

5,494