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600 V tandem Extrafast Boost Diode


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Overview of STTH8T06DI

This device is part of ST's second generation of 600 V tandem diodes. It has ultralow switching-losses with a minimized QRR(6 nC) that makes it perfect for use in circuits working in hard-switching mode. In particular the VF/QRRtrade-off positions this device between standard ultrafast diodes and silicon-carbide Schottky rectifiers in terms of price/performance ratio.The device offers a new positioning giving more flexibility to power-circuit designers looking for good performance while still respecting cost constraints.Featuring ST's Turbo 2 600 V technology, the device is particularly suited as a boost diode in continuous conduction mode power factor correction circuits.

Key Features



The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STTH8T06DI Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Package Description R-PSFM-T2
Reach Compliance Code not_compliant ECCN Code EAR99
HTS Code 8541.10.00.80 Factory Lead Time 45 Weeks
Samacsys Manufacturer STMicroelectronics Additional Feature SOFT FACTOR IS 1.6
Configuration SINGLE Diode Element Material SILICON
Diode Type RECTIFIER DIODE Forward Voltage-Max (VF) 2.55 V
JEDEC-95 Code TO-220AC JESD-30 Code R-PSFM-T2
JESD-609 Code e3 Non-rep Pk Forward Current-Max 80 A
Number of Elements 1 Number of Phases 1
Number of Terminals 2 Operating Temperature-Max 175 °C
Operating Temperature-Min -40 °C Output Current-Max 8 A
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Rep Pk Reverse Voltage-Max 600 V
Reverse Current-Max 10 µA Reverse Recovery Time-Max 0.03 µs
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE

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