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STP42N65M5

Trans MOSFET N-CH Si 650V 33A 3-Pin(3+Tab) TO-220AB Tube

Quantity Unit Price(USD) Ext. Price
1 $11.317 $11.32
10 $10.051 $100.51
50 $9.280 $464.00
100 $8.634 $863.40

Inventory:4,056

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Overview of STP42N65M5

The STP42N65M5 is an N-channel Power MOSFET transistor designed for high-power switching applications.This MOSFET features a low on-state resistance and high switching speed,making it ideal for use in power supplies,motor control, and other high-current circuits.

Pinout

(Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.)

  • G:Gate
  • D:Drain
  • S:Source
  • B:Body (Substrate)

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the STP42N65M5 MOSFET for a visual representation.

Key Features

  • High Power Handling Capability:The STP42N65M5 can handle high power levels,making it suitable for demanding applications.
  • Low On-State Resistance:This MOSFET has a low on-state resistance,resulting in reduced conduction losses and improved efficiency.
  • High Switching Speed:The high switching speed of the STP42N65M5 allows for fast switching transitions in power circuits.
  • Enhanced Thermal Performance:Designed for optimized thermal dissipation,this MOSFET ensures reliable operation under high load conditions.
  • Low Gate Charge:With low gate charge requirements,the STP42N65M5 offers improved gate drive performance and reduced switching losses.

Note:For detailed technical specifications,please refer to the STP42N65M5 datasheet.

Application

  • Power Supplies:Suitable for use in high-power switching power supply designs.
  • Motor Control:Ideal for motor drive applications requiring high efficiency and fast switching.
  • Inverters and Converters:Applicable in inverters,DC-DC converters,and other power electronics systems.

Functionality

The STP42N65M5 Power MOSFET provides high power handling capability with low on-state resistance and fast switching speed,making it a reliable choice for various power electronics applications.

Usage Guide

  • Gate Drive:Apply appropriate gate voltage and ensure proper gate-to-source drive for optimal performance.
  • Heat Management:Implement effective thermal management to maintain the MOSFET within safe operating temperatures under high power loads.
  • Load Connection:Connect the load between the drain and the power supply with proper current-handling considerations.

Frequently Asked Questions

Q:Does the STP42N65M5 require external heat sinking?
A:For high-power applications or extended operation at high currents,external heat sinking may be recommended to maintain safe operating temperatures.

Equivalent

For similar functionalities,consider these alternatives to the STP42N65M5:

  • IRFP4568:P-channel Power MOSFET with comparable power handling and switching characteristics.
  • FDPF20N50:N-channel MOSFET offering similar performance in high-power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STP42N65M5 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 52 Weeks Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 950 mJ Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 650 V Drain Current-Max (Abs) (ID) 33 A
Drain Current-Max (ID) 33 A Drain-source On Resistance-Max 0.079 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 190 W Pulsed Drain Current-Max (IDM) 132 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish TIN Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

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