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Explore the capabilities of STP21NM60ND from STMicroelectronics


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  • Part Number : STP21NM60ND

  • Package/Case : TO-220-3

  • Brands : ST

  • Components Categories : FETs, MOSFETsSingle FETs, MOSFETs

  • Datesheet : STP21NM60ND DataSheet (PDF)

Quick Inquiry

Please submit RFQ for STP21NM60ND or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of STP21NM60ND

N-Channel 600 V 17A (Tc) 140W (Tc) Through Hole TO-220

Key Features

  • The worldwide best RDS(on)area amongst the fast recovery diode devices
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Extremely high dv/dt and avalanche capabilities




The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 17 A Rds On - Drain-Source Resistance 220 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 140 W
Channel Mode Enhancement Series STP21NM60ND
Brand STMicroelectronics Configuration Single
Fall Time 48 ns Height 9.15 mm
Length 10.4 mm Product Type MOSFET
Rise Time 16 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 70 ns Typical Turn-On Delay Time 18 ns
Width 4.6 mm Unit Weight 0.068784 oz

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Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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