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STP21NM60ND

N-channel 600 V, 0.17 Ohm typ., 17 A, FDmesh(TM) II Power MOSFET (whit fast diode) in TO-220 package

Inventory:4,920

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  • Part Number : STP21NM60ND

  • Package/Case : TO-220

  • Brands : ST

  • Components Categories : FETs, MOSFETsSingle FETs, MOSFETs

  • Datesheet : STP21NM60ND DataSheet (PDF)

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Technical Attributes

DescriptionThe FDmesh™ II series belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the companys strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode. It is therefore strongly recommended for bridge topologies, in ZVS phase-shift converters.Features■ The worldwide best RDS(on)*area amongst the fast recovery diode devices■ 100% avalanche tested■ Low input capacitance and gate charge■ Low gate input resistance■ Extremely high dv/dt and avalanche capabilitiesApplication■ Switching applications

Key Features

  • The worldwide best RDS(on)area amongst the fast recovery diode devices
  • 100% avalanche tested
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Extremely high dv/dt and avalanche capabilities

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STP21NM60ND Rohs Code Yes
Part Life Cycle Code Obsolete Ihs Manufacturer STMICROELECTRONICS
Part Package Code TO-220AB Package Description ROHS COMPLIANT, TO-220, 3 PIN
Pin Count 3 Reach Compliance Code not_compliant
ECCN Code EAR99 Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 610 mJ Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V Drain Current-Max (Abs) (ID) 17 A
Drain Current-Max (ID) 17 A Drain-source On Resistance-Max 0.22 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 140 W Pulsed Drain Current-Max (IDM) 68 A
Qualification Status Not Qualified Surface Mount NO
Terminal Finish MATTE TIN Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application SWITCHING
Transistor Element Material SILICON

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