• STGW60V60DF TO-247-3
STGW60V60DF TO-247-3

STGW60V60DF

Trench gate field-stop IGBT, V series 600 V, 60 A very high speed

Inventory:7,357

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Overview of STGW60V60DF

DescriptionThis device is an IGBT developed using an advanced proprietary trench gate and field stop structure. The device is part of the new "HB" series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.Features• Maximum junction temperature: TJ = 175 °C• High speed switching series• Minimized tail current• VCE(sat) = 1.6 V (typ.) @ IC = 60 A• Tight parameters distribution• Safe paralleling• Low thermal resistance• Low VF soft recovery co-packaged diode• Lead free packageApplications• Induction heating• Microwave oven• Resonant converters

Key Features

  • Maximum junction temperature: TJ = 175 °C
  • High speed switching series
  • Minimized tail current
  • VCE(sat) = 1.6 V (typ.) @ IC = 60 A
  • Tight parameters distribution
  • Safe paralleling
  • Low thermal resistance
  • Low VF soft recovery co-packaged diode
  • Lead free package

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STGW60V60DF Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Package Description ,
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 52 Weeks Samacsys Manufacturer STMicroelectronics
Collector Current-Max (IC) 120 A Collector-Emitter Voltage-Max 600 V
Gate-Emitter Voltage-Max 20 V Operating Temperature-Max 175 °C
Peak Reflow Temperature (Cel) NOT SPECIFIED Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 375 W Surface Mount NO
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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