• STFW4N150 TO-3PF
STFW4N150 TO-3PF

STFW4N150

N-channel 1500 V, 5 Ohm, 4 A, PowerMESH(TM) power MOSFET in TO-3PF

Inventory:7,281

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  • Part Number : STFW4N150

  • Package/Case : TO-3PF

  • Brands : ST

  • Components Categories : FETs, MOSFETsSingle FETs, MOSFETs

  • Datesheet : STFW4N150 DataSheet (PDF)

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Overview of STFW4N150

The STFW4N150 is a 1500V N-channel Power MOSFET developed using the well consolidated high voltage MESH OVERLAY™ process. The strengthened layout coupled with the proprietary edge termination structure gives the lowest RDS (on) per area, unrivalled gate charge and switching characteristics. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.

STFW4N150

Key Features

  • 100% Avalanche tested
  • Intrinsic capacitances and Qg minimized
  • High speed switching
  • High peak power
  • High ruggedness capability

Application

  • Industrial

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STFW4N150 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Part Package Code TO-3PF
Package Description ROHS COMPLIANT, PLASTIC, TO-3PF, 3 PIN Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 50 Weeks Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 350 mJ Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 1500 V
Drain Current-Max (Abs) (ID) 2.5 A Drain Current-Max (ID) 4 A
Drain-source On Resistance-Max 7 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 12 A Qualification Status Not Qualified
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING

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