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N-channel 800 V, 0.400 Ohm typ., 12 A MDmesh K5 Power MOSFET in a TO-220FP package


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  • Part Number : STF14N80K5

  • Package/Case : TO-220FP

  • Brands : ST

  • Components Categories : FETs, MOSFETsSingle FETs, MOSFETs

  • Datesheet : STF14N80K5 DataSheet (PDF)

Quick Inquiry

Please submit RFQ for STF14N80K5 or email to us: Email: [email protected], we will contact you in 12 hours.

Overview of STF14N80K5

Features Industry’s lowest RDS(on) x area Industry’s best figure of merit (FoM) Ultra-low gate charge 100% avalanche tested Zener-protectedApplications Switching applicationsDescriptionThese very high voltage N-channel PowerMOSFET are designed using MDmesh™ K5technology based on an innovative proprietaryvertical structure. The result is a dramaticreduction in on-resistance and ultra-low gatecharge for applications requiring superior powerdensity and high efficiency.

Key Features

  • Industry’s lowest RDS(on) x area
  • Industry’s best figure of merit (FoM)
  • Ultra-low gate charge
  • 100% avalanche tested
  • Zener-protected




The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STF14N80K5 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Reach Compliance Code not_compliant
ECCN Code EAR99 Factory Lead Time 52 Weeks
Samacsys Manufacturer STMicroelectronics Avalanche Energy Rating (Eas) 270 mJ
DS Breakdown Voltage-Min 800 V Drain Current-Max (ID) 12 A
Drain-source On Resistance-Max 0.445 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 0.8 pF JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style FLANGE MOUNT Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 30 W
Pulsed Drain Current-Max (IDM) 48 A Surface Mount NO
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED Transistor Application SWITCHING
Transistor Element Material SILICON

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