STF11NM60N
The STF11NM60N is a 3-pin (3+Tab) N-channel MOSFET designed for applications requiring high voltage (up to 600V) and moderate current (10A)
Inventory:9,573
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Part Number : STF11NM60N
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Package/Case : TO220-3
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Manufacturer : Stmicroelectronics
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Components Classification : Single FETs, MOSFETs
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Datesheet : STF11NM60N DataSheet (PDF)
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Series : STF11
The STF11NM60N is an N-channel Power MOSFET featuring a high switching speed, low on-resistance, and a breakdown voltage of 600V. It is designed for high-performance power supply and motor control applications, delivering efficient and reliable switching performance. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the STF11NM60N for a visual representation. Note: For detailed technical specifications, please refer to the STF11NM60N datasheet. Functionality The STF11NM60N is an N-channel Power MOSFET designed to facilitate efficient power management and control in applications such as power supplies, motor control, and inverters. Usage Guide Q: What is the maximum voltage rating of the STF11NM60N? Q: Can the STF11NM60N be used in automotive systems? For similar functionalities, consider these alternatives to the STF11NM60N:Overview of STF11NM60N
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The STF11NM60N has a breakdown voltage of 600V, making it suitable for high voltage applications.
A: Yes, the STF11NM60N is suitable for motor control applications in automotive systems due to its high performance characteristics.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | Through Hole |
Package / Case | TO-220-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 600 V |
Id - Continuous Drain Current | 10 A | Rds On - Drain-Source Resistance | 450 mOhms |
Vgs - Gate-Source Voltage | - 25 V, + 25 V | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 25 W |
Channel Mode | Enhancement | Series | STB11NM60 |
Brand | STMicroelectronics | Configuration | Single |
Fall Time | 12 ns | Height | 9.3 mm |
Length | 10.4 mm | Product Type | MOSFET |
Rise Time | 18.5 ns | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 50 ns | Typical Turn-On Delay Time | 22 ns |
Width | 4.6 mm | Unit Weight | 0.068784 oz |
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STF11NM60N
The STF11NM60N is a 3-pin (3+Tab) N-channel MOSFET designed for applications requiring high voltage (up to 600V) and moderate current (10A)
Inventory:
9,573
Warranty & Returns
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