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STF11NM60N

The STF11NM60N is a 3-pin (3+Tab) N-channel MOSFET designed for applications requiring high voltage (up to 600V) and moderate current (10A)

Inventory:9,573

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Overview of STF11NM60N

The STF11NM60N is an N-channel Power MOSFET featuring a high switching speed, low on-resistance, and a breakdown voltage of 600V. It is designed for high-performance power supply and motor control applications, delivering efficient and reliable switching performance.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate Terminal
  • D: Drain Terminal
  • S: Source Terminal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the STF11NM60N for a visual representation.

Key Features

  • High Switching Speed: Enables fast switching transitions, suitable for high-frequency applications.
  • Low On-Resistance: The low RDS(ON) value ensures minimal power dissipation and heat generation.
  • High Breakdown Voltage: With a 600V breakdown voltage, it is suitable for high-voltage applications.
  • Enhanced Efficiency: Provides efficient power management and control in various electronic systems.

Note: For detailed technical specifications, please refer to the STF11NM60N datasheet.

Application

  • Power Supply Units: Suitable for use in power supply units for industrial and consumer electronics.
  • Motor Control: Ideal for motor control applications in automotive and industrial systems.
  • Inverters: Used in inverter circuits for converting DC power to AC power in renewable energy systems.

Functionality

The STF11NM60N is an N-channel Power MOSFET designed to facilitate efficient power management and control in applications such as power supplies, motor control, and inverters.

Usage Guide

  • Gate Connection: Connect the gate terminal (G) to the driving circuit for controlling the MOSFET.
  • Drain Connection: Connect the drain terminal (D) to the load or power supply.
  • Source Connection: Connect the source terminal (S) to the ground or return path.

Frequently Asked Questions

Q: What is the maximum voltage rating of the STF11NM60N?
A: The STF11NM60N has a breakdown voltage of 600V, making it suitable for high voltage applications.

Q: Can the STF11NM60N be used in automotive systems?
A: Yes, the STF11NM60N is suitable for motor control applications in automotive systems due to its high performance characteristics.

Equivalent

For similar functionalities, consider these alternatives to the STF11NM60N:

  • IRF840: An N-channel Power MOSFET with similar voltage and current ratings, suitable for power applications.
  • BUK961R8-55E: This N-channel MOSFET from Nexperia offers comparable performance and characteristics to the STF11NM60N.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style Through Hole
Package / Case TO-220-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 600 V
Id - Continuous Drain Current 10 A Rds On - Drain-Source Resistance 450 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 25 W
Channel Mode Enhancement Series STB11NM60
Brand STMicroelectronics Configuration Single
Fall Time 12 ns Height 9.3 mm
Length 10.4 mm Product Type MOSFET
Rise Time 18.5 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 50 ns Typical Turn-On Delay Time 22 ns
Width 4.6 mm Unit Weight 0.068784 oz

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STF11NM60N

The STF11NM60N is a 3-pin (3+Tab) N-channel MOSFET designed for applications requiring high voltage (up to 600V) and moderate current (10A)

Inventory:

9,573