• STD150N3LLH6 DPAK
STD150N3LLH6 DPAK

STD150N3LLH6

STripFET VI DeepGATE

Quantity Unit Price(USD) Ext. Price
1 $1.024 $1.02
200 $0.397 $79.40
500 $0.383 $191.50
1000 $0.375 $375.00

Inventory:8,308

*The price is for reference only.
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Overview of STD150N3LLH6

The STD150N3LLH6 is an N-channel Power MOSFET designed for high-current switching applications. It features a low on-state resistance and high-speed switching capabilities, making it ideal for power management in various electronic systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • B: Body Diode

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the STD150N3LLH6 MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The STD150N3LLH6 offers a low RDS(on) value, minimizing power dissipation and improving efficiency.
  • High Current Capability: With its high current-handling capacity, this MOSFET is suitable for power applications requiring large currents.
  • Fast Switching Speed: The STD150N3LLH6 exhibits fast switching characteristics, facilitating rapid switching operations in electronic circuits.
  • Enhanced Power Management: This MOSFET enables efficient power management in DC-DC converters, motor control, and other power electronics applications.
  • Temperature Stability: Designed to operate reliably across a wide temperature range, ensuring stable performance in various environments.

Note: For detailed technical specifications, please refer to the STD150N3LLH6 datasheet.

Application

  • Power Supplies: Ideal for use in power supplies, inverters, and voltage regulation circuits.
  • Motor Control: Suitable for motor drive applications due to its high current and voltage capabilities.
  • Switching Circuits: Used in high-speed switching circuits for efficient power management.

Functionality

The STD150N3LLH6 Power MOSFET is designed to control and switch high currents with low resistance, providing effective power management solutions for electronic devices.

Usage Guide

  • Gate Control: Apply the appropriate gate voltage to control the MOSFET switching operation.
  • Load Connection: Connect the load between the drain and source pins for current flow control.
  • Heat Dissipation: Ensure proper heat sinking to manage the MOSFET's temperature during operation.

Frequently Asked Questions

Q: Is the STD150N3LLH6 suitable for high-frequency switching applications?
A: Yes, the fast switching speed of the STD150N3LLH6 makes it suitable for high-frequency switching requirements.

Equivalent

For similar functionalities, consider these alternatives to the STD150N3LLH6:

  • STP160N3LLH6: An equivalent N-channel Power MOSFET with slightly different specifications but similar performance.
  • IRF140N3LLH6: This Power MOSFET from Infineon offers comparable features to the STD150N3LLH6 for power management applications.

STD150N3LLH6

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STD150N3LLH6 Part Life Cycle Code Obsolete
Ihs Manufacturer STMICROELECTRONICS Part Package Code TO-252
Package Description SMALL OUTLINE, R-PSSO-G2 Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Samacsys Manufacturer STMicroelectronics Avalanche Energy Rating (Eas) 525 mJ
Case Connection DRAIN Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V Drain Current-Max (Abs) (ID) 80 A
Drain Current-Max (ID) 80 A Drain-source On Resistance-Max 0.0045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 2 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 110 W Pulsed Drain Current-Max (IDM) 320 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed Terminal Form GULL WING
Terminal Position SINGLE Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON

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