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STB36NM60ND

STB36NM60ND is a N-channel MOSFET transistor designed for automotive applications

Inventory:9,296

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Overview of STB36NM60ND

The STB36NM60ND is an N-channel Power MOSFET designed for high-power switching applications. It features a low on-resistance and high drain current capability, making it suitable for use in various power electronics circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the STB36NM60ND MOSFET for a visual representation.

Key Features

  • High Power Switching: The STB36NM60ND is capable of handling high power levels, suitable for power conversion and motor control applications.
  • Low On-Resistance: This MOSFET offers low on-resistance, reducing power losses and improving efficiency in switching circuits.
  • High Drain Current: With a high drain current rating, it can handle large currents without overheating.
  • Fast Switching Speed: The STB36NM60ND has a fast switching speed, enabling quick response in power switching operations.
  • Enhanced Thermal Performance: Designed for enhanced thermal dissipation, ensuring reliable operation under high load conditions.

Note: For detailed technical specifications, please refer to the STB36NM60ND datasheet.

Application

  • Power Supplies: Ideal for power supply circuits requiring high current handling capabilities.
  • Motor Control: Suitable for motor control applications in industrial and automotive systems.
  • Inverters: Used in inverter circuits for converting DC power to AC power in various electronics systems.

Functionality

The STB36NM60ND Power MOSFET is designed to provide efficient and reliable power switching in a wide range of applications, from power supplies to motor control systems.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the control signal to switch the MOSFET ON and OFF.
  • Drain-Source Connection: Ensure proper connection between the drain (D) and source (S) pins based on the circuit requirements.
  • Heat Management: Adequate heat sinking is important to maintain the MOSFET's temperature within safe limits during operation.

Frequently Asked Questions

Q: What is the maximum drain current rating of the STB36NM60ND?
A: The STB36NM60ND can handle a maximum drain current of X amperes.

Q: Is the STB36NM60ND suitable for high-frequency switching applications?
A: Yes, the STB36NM60ND offers fast switching speeds, making it suitable for high-frequency switching operations.

Equivalent

For similar functionalities, consider these alternatives to the STB36NM60ND:

  • IRF3205: An N-channel Power MOSFET with comparable specifications for power switching applications.
  • FDP8878: This MOSFET offers similar performance characteristics and power handling capabilities.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case D2PAK-3 (TO-263-3) Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 650 V
Id - Continuous Drain Current 29 A Rds On - Drain-Source Resistance 110 mOhms
Vgs - Gate-Source Voltage - 25 V, + 25 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 80.4 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 190 W
Channel Mode Enhancement Qualification AEC-Q101
Series STW36NM60N Brand STMicroelectronics
Configuration Single Fall Time 61.8 ns
Product Type MOSFET Rise Time 53.4 ns
Factory Pack Quantity 1000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 111 ns
Typical Turn-On Delay Time 30 ns Unit Weight 0.139332 oz

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packageimg

STB36NM60ND

STB36NM60ND is a N-channel MOSFET transistor designed for automotive applications

Inventory:

9,296