STB36NM60ND
STB36NM60ND is a N-channel MOSFET transistor designed for automotive applications
Inventory:9,296
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : STB36NM60ND
-
Package/Case : TO-263-3
-
Manufacturer : Stmicroelectronics
-
Components Classification : Single FETs, MOSFETs
-
Datesheet : STB36NM60ND DataSheet (PDF)
-
Series : STW36NM60N
The STB36NM60ND is an N-channel Power MOSFET designed for high-power switching applications. It features a low on-resistance and high drain current capability, making it suitable for use in various power electronics circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the STB36NM60ND MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the STB36NM60ND datasheet. Functionality The STB36NM60ND Power MOSFET is designed to provide efficient and reliable power switching in a wide range of applications, from power supplies to motor control systems. Usage Guide Q: What is the maximum drain current rating of the STB36NM60ND? Q: Is the STB36NM60ND suitable for high-frequency switching applications? For similar functionalities, consider these alternatives to the STB36NM60ND:Overview of STB36NM60ND
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The STB36NM60ND can handle a maximum drain current of X amperes.
A: Yes, the STB36NM60ND offers fast switching speeds, making it suitable for high-frequency switching operations.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | D2PAK-3 (TO-263-3) | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 650 V |
Id - Continuous Drain Current | 29 A | Rds On - Drain-Source Resistance | 110 mOhms |
Vgs - Gate-Source Voltage | - 25 V, + 25 V | Vgs th - Gate-Source Threshold Voltage | 4 V |
Qg - Gate Charge | 80.4 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 190 W |
Channel Mode | Enhancement | Qualification | AEC-Q101 |
Series | STW36NM60N | Brand | STMicroelectronics |
Configuration | Single | Fall Time | 61.8 ns |
Product Type | MOSFET | Rise Time | 53.4 ns |
Factory Pack Quantity | 1000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 111 ns |
Typical Turn-On Delay Time | 30 ns | Unit Weight | 0.139332 oz |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy ?
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package ?
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment ?
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
STF24N60M2
Reliable operation up to 600 volts and 18 amps
IRF4905STRLPBF
MOSFET IRF4905STRLPBF: -55V rated P-channel device capable of handling currents up to -74A
KST10MTF
23 Transistor NPN 25V 350mW RF BJT
STE26NA90
Field-Effect Transistor with Power Capability, N-Channel, Silicon MOSFET, 26A Current, 900V Voltage, 0.3ohm Resistance
ST10F168-Q3
16-bit flash microcontroller with a 25 MHz clock speed in PQFP144 package
IRF5210STRLPBF
100V N-channel D2-PAK MOSFET, IRF5210STRLPBF
STD10NF10T4
STripFET II technology utilized in a 13 A rated Power MOSFET with 100 V voltage capability
IRFBG20PBF
TO-220AB 3-pin N-channel MOSFET with 1.4A current and 1kV voltage rating
IRF7410TRPBF
Product Description: IRF7410TRPBF MOSFET N-channel 12V SO-8
2SK3047
TO-220AB TO-220D-A1 3 PIN
BUL903ED
TO-220AB-packaged BUL903ED: NPN silicon power transistor featuring a 5A current rating and 400V voltage rating
FZ1600R12KF4
N-Channel module-7 with a rating of 1600A I(C) and 1200V V(BR)CES
IRFS38N20DPBF
Product designation: IRFS38N20DPBF
STB36NM60ND
STB36NM60ND is a N-channel MOSFET transistor designed for automotive applications
Inventory:
9,296Warranty & Returns
After Sales Service
What after-sales service can be provided?
We provide an extended quality assurance period of 365 days for all components we offer. If a return or exchange becomes essential, kindly adhere to these guidelines:
·Initiate the request within 90 days after the item's shipment date.
·Coordinate the return or exchange with our team.
·Keep the items in their original condition as delivered.
·Please be aware that the feasibility of returning or exchanging items is contingent upon an evaluation of their actual state upon return.
Shipping
What channels of transportation of goods does the website support?
We usually send out our orders during business days using FedEx, SF, UPS, or DHL. We're also here to assist with alternative shipping options. Should you require additional information about shipping particulars or expenses, please don't hesitate to get in touch with us.
Package
How to ensure that the parts will be intact during transportation?
The items we ship will be packaged in anti-static bags, ensuring ESD anti-static protection, while the outer packaging boasts exceptional durability and sealing. We offer packaging options like Tape and Reel, Cut Tape, Tube, or Tray to suit your needs.
Payment
Which payment methods can be used to pay for goods
Accepted payment methods commonly encompass VISA, MasterCard, UnionPay, Western Union, PayPal, and various other options.
Should you have a particular payment preference or wish to seek information on rates and other specifics, please feel free to reach out to us.