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SST27SF010-70-3C-PHE

28 kilobytes organized into 8 bits per byte and a speed of 70 nanoseconds

Inventory:6,434

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Overview of SST27SF010-70-3C-PHE

The SST27SF010-70-3C-PHE is a 1 Megabit (128K x 8) CMOS Flash memory IC with a 70ns access time and a parallel interface. It offers non-volatile storage for applications requiring program and data storage functionality.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • A0-A16: Address Inputs
  • DQ0-DQ7: Data Input/Output
  • CE: Chip Enable
  • OE: Output Enable
  • WE: Write Enable
  • VCC: Positive Power Supply
  • GND: Ground

Circuit Diagram

Include a circuit diagram illustrating how the SST27SF010-70-3C-PHE IC is connected for proper operation.

Key Features

  • 1 Megabit Capacity: Provides 1 Megabit of non-volatile storage for program and data storage applications.
  • Fast Access Time: With a 70ns access time, this Flash memory IC offers quick read and write operations.
  • Parallel Interface: Utilizes a parallel interface for data transfer, suitable for systems requiring parallel communication.
  • CMOS Technology: Built using CMOS technology, the SST27SF010-70-3C-PHE supports low-power operation.
  • Reliable Storage: Offers reliable non-volatile storage for critical data in various applications.

Note: For detailed technical specifications, refer to the SST27SF010-70-3C-PHE datasheet.

Application

  • Embedded Systems: Ideal for use in embedded systems for program storage and firmware applications.
  • Data Logging: Suitable for applications requiring non-volatile data storage and retrieval.
  • Firmware Storage: Used in devices requiring firmware storage for boot-up and operation.

Functionality

The SST27SF010-70-3C-PHE Flash memory IC provides reliable non-volatile storage with fast access times, making it a versatile solution for a wide range of applications requiring program and data storage capabilities.

Usage Guide

  • Power Supply: Connect VCC (Pin 5) to the positive power supply and GND (Pin 8) to ground.
  • Data Transfer: Use the CE, OE, and WE pins to control the read and write operations on the memory IC.
  • Addressing: Apply the appropriate address inputs (A0-A16) to access specific memory locations.

Frequently Asked Questions

Q: What is the access time of the SST27SF010-70-3C-PHE?
A: The SST27SF010-70-3C-PHE offers a fast access time of 70ns for efficient read and write operations.

Q: Is the SST27SF010-70-3C-PHE suitable for automotive applications?
A: Yes, the SST27SF010-70-3C-PHE can be used in automotive applications requiring non-volatile memory storage.

Equivalent

For similar functionalities, consider these alternatives to the SST27SF010-70-3C-PHE:

  • AT29C010A-12PC: A 1 Megabit CMOS Flash memory IC offering similar capacity and performance characteristics.
  • W27C010-70: This is a 1 Megabit EPROM IC with a 70ns access time, suitable for program storage applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category NOR Flash RoHS Details
Mounting Style Through Hole Package / Case PDIP-32
Series SST27SF010 Memory Size 1 Mbit
Supply Voltage - Min 4.5 V Supply Voltage - Max 5.5 V
Active Read Current - Max 30 mA Interface Type Parallel
Data Bus Width 8 bit Timing Type Asynchronous
Minimum Operating Temperature 0 C Maximum Operating Temperature + 70 C
Architecture Non Sector Brand Greenliant
Memory Type NOR Product Type NOR Flash
Speed 70 ns Standard Not Supported
Factory Pack Quantity 11 Subcategory Memory & Data Storage
Unit Weight 0.078125 oz

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SST27SF010-70-3C-PHE

28 kilobytes organized into 8 bits per byte and a speed of 70 nanoseconds

Inventory:

6,434