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SSM6K819R,LXHF

High-power MOSFET SSM6K819R,LXHF

Inventory:5,749

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Overview of SSM6K819R

The SSM6K819R is a power MOSFET designed for use in switching applications such as power supplies, motor control, and load switching. This MOSFET features low on-resistance and fast switching performance, making it suitable for high-efficiency power management solutions.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • VCC: Positive power supply
  • GND: Power ground

Circuit Diagram

Include a circuit diagram illustrating the use of SSM6K819R MOSFET for a visual representation.

Key Features

  • Low On-Resistance: The SSM6K819R offers low on-resistance for reduced power losses and improved efficiency in power switching applications.
  • Fast Switching Speed: This MOSFET provides fast switching characteristics, enabling high-speed operation in various applications.
  • High Voltage Capability: With its high voltage rating, the SSM6K819R is suitable for high-voltage applications requiring efficient power management.
  • Compact Package: Available in a compact surface-mount package, offering space-saving benefits in electronic designs.
  • Robust Construction: The SSM6K819R is designed for rugged environments, providing reliable performance in demanding conditions.

Note: For detailed technical specifications, please refer to the SSM6K819R datasheet.

Application

  • Power Supplies: Ideal for use in switching power supply circuits for efficient voltage regulation and power management.
  • Motor Control: Suitable for motor control applications, including brushed DC motors and small appliance motor drives.
  • Load Switching: Used in load switching applications to control the flow of current in electronic systems.

Functionality

The SSM6K819R power MOSFET is designed to provide efficient power switching and high-speed operation in various electronic applications, contributing to improved energy efficiency and performance.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the gate pin (G) to control the switching behavior of the MOSFET.
  • Power Connections: Connect the drain (D) and source (S) pins to the power supply and load in the intended circuit configuration.

Frequently Asked Questions

Q: Can the SSM6K819R be used in automotive applications?
A: Yes, the SSM6K819R's robust construction and high voltage capability make it well-suited for automotive power management and motor control applications.

Equivalent

For similar functionalities, consider these alternatives to the SSM6K819R:

  • IRF9540N: This is a power MOSFET with comparable specifications, suitable for power switching and motor control applications.
  • BSC028N06NS: A power MOSFET offering similar performance characteristics and voltage handling capabilities to the SSM6K819R.
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Overview of LXHF

The LXHF is a high-frequency inductor designed for use in various RF and high-speed digital applications. This inductor features a compact and efficient design, providing high performance in compact electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VCC: Positive terminal for power input
  • GND: Ground connection
  • OUT: Output terminal

Circuit Diagram

Include a circuit diagram illustrating the use of LXHF inductor for a visual representation.

Key Features

  • High Frequency Operation: The LXHF inductor is designed for high-frequency applications, providing effective performance in RF and digital circuits.
  • Compact Size: With its compact form factor, the LXHF inductor is suitable for space-constrained electronic designs.
  • Low Losses: This inductor offers low core losses, contributing to high efficiency in power conversion and signal processing.
  • Stable Performance: The LXHF maintains stable inductance and impedance characteristics across a wide frequency range.
  • RoHS Compliant: The LXHF complies with RoHS regulations, ensuring environmentally-friendly manufacturing.

Note: For detailed technical specifications, please refer to the LXHF datasheet.

Application

  • RF Circuits: Ideal for use in RF amplifiers, oscillators, and filters for wireless communication systems.
  • High-Speed Digital Circuits: Suitable for applications such as signal integrity, impedance matching, and power delivery in high-speed digital designs.
  • Power Supplies: Used in power supply and voltage regulation circuits for efficient energy conversion.

Functionality

The LXHF high-frequency inductor is designed to provide stable inductance and superior performance in RF and high-speed digital applications, contributing to reliable signal processing and energy efficiency.

Usage Guide

  • Placement: Integrate the LXHF inductor into the circuit design, considering its placement and orientation for optimum performance.
  • Frequency Consideration: Choose the appropriate LXHF variant based on the frequency range of the intended application.

Frequently Asked Questions

Q: Can the LXHF be used in wireless communication systems?
A: Yes, the LXHF inductor is suitable for RF circuits in wireless communication systems, providing effective signal processing and impedance matching.

Q: Is the LXHF suitable for high-power applications?
A: The LXHF is designed for high-frequency operation and is suitable for various power levels; however, specific power ratings should be verified based on the datasheet specifications.

Equivalent

For similar functionalities, consider these alternatives to the LXHF:

  • LQG15HSR10J02D: A high-frequency inductor with comparable performance characteristics suitable for RF and digital applications.
  • NR6028T100M: This is a surface-mount inductor offering similar high-frequency performance and compact design as the LXHF.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TSOP6F Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 10 A Rds On - Drain-Source Resistance 20.9 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 2.5 V
Qg - Gate Charge 8.5 nC Maximum Operating Temperature + 175 C
Pd - Power Dissipation 1.5 W Channel Mode Enhancement
Qualification AEC-Q101 Brand Toshiba
Configuration Single Fall Time 8 ns
Product Type MOSFET Rise Time 27 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Typical Turn-Off Delay Time 30 ns Typical Turn-On Delay Time 46 ns
Part # Aliases SSM6K819R,LXHF(B

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SSM6K819R,LXHF

High-power MOSFET SSM6K819R,LXHF

Inventory:

5,749