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SSM3J35FS

Small Signal MOSFET Component for Low Power Applications

Inventory:3,067

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Overview of SSM3J35FS

The SSM3J35FS is a P-channel enhancement mode field-effect transistor (FET) designed for use in low-voltage applications. It features a compact and lightweight design, making it suitable for portable electronic devices and power management applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • S: Source
  • D: Drain
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SSM3J35FS for a visual representation.

Key Features

  • P-Channel FET: The SSM3J35FS is a P-channel FET suitable for low-voltage applications.
  • Compact Design: Its compact form factor makes it ideal for use in small electronic devices and power management circuits.
  • Low On-Resistance: This FET offers low on-resistance for efficient power handling and minimal voltage drops.
  • Enhancement Mode: Designed with enhancement mode operation for ease of use in circuit design and control.
  • High-Speed Switching: Provides high-speed switching capabilities for responsive power control.

Note: For detailed technical specifications, please refer to the SSM3J35FS datasheet.

Application

  • Battery Management: Suitable for battery management and power control in portable electronic devices.
  • Power Switching: Used for power switching and voltage regulation in low-voltage circuits.
  • Load Control: Applied in load control circuits requiring P-channel FET characteristics.

Functionality

The SSM3J35FS is an enhancement mode P-channel FET designed to efficiently control power and manage voltage levels in low-voltage applications, making it a versatile component in various electronic systems.

Usage Guide

  • Gate Control: Apply appropriate gate-source voltage to control the switching action of the FET.
  • Source and Drain Connections: Connect the source and drain pins to the respective circuit nodes based on the application requirements.

Frequently Asked Questions

Q: What is the maximum voltage rating for the SSM3J35FS?
A: The SSM3J35FS is designed for use in low-voltage applications with a maximum allowable voltage specified in the datasheet.

Q: Can the SSM3J35FS be used for power management in mobile devices?
A: Yes, the SSM3J35FS is suitable for power management applications in portable electronic devices due to its low-voltage characteristics and compact design.

Equivalent

For similar functionalities, consider these alternatives to the SSM3J35FS:

  • SSM6J14F: This P-channel FET from a similar series offers comparable performance and characteristics suited for low-voltage applications.
  • FQP27P06: A P-channel MOSFET with similar low-voltage capabilities and power management features.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET Technology Si
Qualification AEC-Q101 Tradename MOSVI
Brand Toshiba Product Type MOSFET
Subcategory MOSFETs

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SSM3J35FS

Small Signal MOSFET Component for Low Power Applications

Inventory:

3,067