• packageimg
packageimg

SSM3J351R,LXHF

Trans MOSFET P-CH Si 60V 3.5A Automotive 3-Pin SOT-23F

Quantity Unit Price(USD) Ext. Price
1 $0.470 $0.47
200 $0.187 $37.40
500 $0.181 $90.50
1000 $0.178 $178.00

Inventory:5,895

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for SSM3J351R,LXHF using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of SSM3J351R

The SSM3J351R is an N-channel MOSFET designed for low voltage, low current applications. It features a compact and efficient design, making it ideal for portable and battery-powered electronic devices.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • G: Gate

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SSM3J351R for a visual representation.

Key Features

  • Low Voltage, Low Current MOSFET: Designed for applications requiring efficient power management at low voltages and currents.
  • Compact Design: The SSM3J351R features a miniature package, making it suitable for space-constrained electronic devices.
  • Portable Electronics: Ideal for use in portable and battery-powered electronic devices such as smartphones, tablets, and wearable gadgets.
  • Efficient Power Management: Provides efficient power control and amplification for small-scale electronic applications.

Note: For detailed technical specifications, please refer to the SSM3J351R datasheet.

Application

  • Battery-Powered Devices: Suitable for use in electronic devices powered by batteries or low voltage sources.
  • Portable Electronics: Ideal for applications requiring compact and efficient power management solutions.
  • Low Power Circuits: Designed for low power consumption circuits in various electronic devices.

Functionality

The SSM3J351R is an N-channel MOSFET with a focus on low voltage and low current applications. It provides reliable and efficient power management for portable and battery-powered electronic devices.

Usage Guide

  • Connection: Connect the Gate, Drain, and Source pins as per the circuit requirements for low voltage and low current applications.
  • Operating Limits: Adhere to the specified voltage and current limits as outlined in the datasheet for optimal performance.

Equivalent

For similar functionalities, consider these alternatives to the SSM3J351R:

  • FDMC8884:A comparable N-channel MOSFET offering similar characteristics and performance for low voltage applications.
  • DMN3012LSS:A low voltage, low current MOSFET with characteristics suitable for portable and battery-powered devices.
``` And here is the product description for LXHF in the requested HTML format: ```html

Overview of LXHF

The LXHF is a high-frequency, low-noise amplifier designed for RF and microwave applications. It offers excellent signal amplification while maintaining minimal noise levels, making it suitable for demanding communication and signal processing systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • VCC: Positive power supply
  • GND: Ground connection
  • IN: RF/microwave input
  • OUT: Amplified RF/microwave output

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the LXHF amplifier for a visual representation.

Key Features

  • High-Frequency Amplification: Designed for RF and microwave applications requiring signal amplification in high-frequency bands.
  • Low Noise Figure: Maintains minimal noise levels during signal amplification, ensuring high signal integrity.
  • Broadband Performance: Offers broad frequency coverage, making it suitable for various RF and microwave communication systems.
  • High Gain: Provides significant signal gain to compensate for signal losses in communication or processing chains.
  • RF and Microwave Applications: Suitable for a wide range of RF and microwave signal processing and communication systems.

Note: For detailed technical specifications, please refer to the LXHF datasheet.

Application

  • RF Communication Systems: Ideal for use in radio frequency communication systems, including wireless networks and satellite communication.
  • Microwave Signal Processing: Suitable for amplifying microwave signals in radar systems, microwave links, and sensing applications.
  • High-Frequency Instruments: Used in high-frequency measurement instruments and devices requiring low-noise amplification.

Functionality

The LXHF is a high-frequency, low-noise amplifier tailored for RF and microwave applications, delivering superior signal amplification with minimal noise interference.

Usage Guide

  • Power Supply: Connect VCC (positive power supply) and GND (ground) pins to the appropriate power sources.
  • Input and Output Connections: Connect the RF/microwave input and amplified output to the respective devices or systems as per the application requirements.

Equivalent

For similar functionalities, consider these alternatives to the LXHF:

  • BBY51-02V:A high-frequency, low-noise RF amplifier designed for comparable RF and microwave applications.
  • MGA-83563:A broadband, high-gain amplifier with low noise figure suitable for RF and microwave signal processing.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-23F-3 Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 3.5 A Rds On - Drain-Source Resistance 164 mOhms
Vgs - Gate-Source Voltage - 20 V, + 10 V Vgs th - Gate-Source Threshold Voltage 2 V
Qg - Gate Charge 15.1 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 2 W
Channel Mode Enhancement Qualification AEC-Q101
Brand Toshiba Configuration Single
Forward Transconductance - Min 6.4 S Product Type MOSFET
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 P-Channel Typical Turn-Off Delay Time 100 ns
Typical Turn-On Delay Time 32 ns Unit Weight 0.000388 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy ?

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package ?

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment ?

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

packageimg

SSM3J351R,LXHF

Trans MOSFET P-CH Si 60V 3.5A Automotive 3-Pin SOT-23F

Inventory:

5,895