• SQ1470AEH-T1_GE3 Package
SQ1470AEH-T1_GE3 Package

SQ1470AEH-T1_GE3

In Stock:6,154

SQ1470AEH-T1_GE3 is a high-quality Single FETs, MOSFETs from SILICONIX with a operating temperature range of - 55 C ~ + 175 C

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SQ1470AEH-T1_GE3

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-363-6 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 1.7 A Rds On - Drain-Source Resistance 45 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage 600 mV
Qg - Gate Charge 5.2 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 3.3 W
Channel Mode Enhancement Qualification AEC-Q101
Tradename TrenchFET Series SQ
Brand Vishay Semiconductors Configuration Single
Fall Time 8 ns Forward Transconductance - Min 14 S
Height 1 mm Length 2.1 mm
Product Type MOSFET Rise Time 13 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 14 ns
Typical Turn-On Delay Time 10 ns Width 1.25 mm
Unit Weight 0.000265 oz

Overview of SQ1470AEH-T1_GE3

N-Channel 30 V 1.7A (Tc) 3.3W (Tc) Surface Mount SC-70-6

Key Features

  • Fault tolerant circuitry
  • Rapid fault detection
  • Instantaneous shutdown capability

Warranty & Returns

Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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SQ1470AEH-T1_GE3 Package

SQ1470AEH-T1_GE3

MOSFET 30V Vds +/-12V Vgs AEC-Q101 Qualified

Inventory:

6,154